RUL035N02TR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 1mA
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	TUMT6
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	320mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	460pF @ 10V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	5.7nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	43 mOhm @ 3.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The RUL035N02TR is a transistor that falls into the category of field effect transistors or FETs - specifically, single MOSFETs. FETs offer a dramatically different type of design than a standard bipolar transistor and for certain uses, can offer a dramatic improvement in performance.The RUL035N02TR is specifically a single N-channel MOSFET. In simple terms, it’s a switch that is operated by a small voltage on the gate. This can be used to control the flow of current through the MOSFET and therefore, turn a load circuit on or off.For example, if the voltage applied to the RUL035N02TR‘s gate rises above the threshold voltage of 4V, it will be “on” and let current flow through it. If the voltage at the gate drops below 4V, the FET will turn “off” and stop current flow.The RUL035N02TR is engineered to work as a switch in a variety of different applications. It can also be used in a wide range of power management and signal conditioning circuits.In power management applications, the RUL035N02TR can be used to switch in or out large currents. It is capable of switching up to 35A of current and can handle voltage up to 100V. This means it can be used to control bigger loads with higher voltages, such as high-power electric motors.In signal conditioning circuits, the RUL035N02TR can be used to clean up signals and filter out noise. This is because the FET has a very low on-resistance and when it is in its “on” state, virtually very little resistance is in the circuit.The main advantage of using an FET like the RUL035N02TR is its high frequency response. Because of its low resistance, the FET can switch at very high frequencies, often in the range of several million times per second. This makes it ideal for applications like radio frequency signal processing.In summary, the RUL035N02TR is a single N-channel MOSFET that can be used in a variety of different applications. It can be used as a switch in power management applications, where it can control large currents and high voltages. It can also be used in signal conditioning circuits to clean up and filter out noise. Its main advantage is that it can switch very quickly, making it ideal for high frequency signal processing.

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