RUM002N02T2L Discrete Semiconductor Products |
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Allicdata Part #: | RUM002N02T2LTR-ND |
Manufacturer Part#: |
RUM002N02T2L |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 20V 0.2A VMT3 |
More Detail: | N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RUM002N02T2L Datasheet/PDF |
Quantity: | 32000 |
8000 +: | $ 0.04057 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 10V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 200mA, 2.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 2.5V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RUM002N02T2L Application Field and Working Principle
RUM002N02T2L is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). Its ratings include a drain-source voltage of 30V, drain current of 2A and is packaged in an SOT-23 package. The MOSFET RUM002N02T2L from ROHM semiconductor is a 30 Volt PMOS transistor which is primarily used as a load switch or level shifter.
The MOSFET is an electrically controlled current-dependent device. It has three terminals, the Source terminal, the Gate terminal, and the Drain terminal. The source and drain terminals are the two electrodes with an insulation layer between them known as the gate. The Gate terminal is the control terminal that applies a potential to the transistor, which in turn regulates the electrical current through the drain to the source.
The basic principle of a MOSFET is that it acts as a voltage-controlled resistor. Therefore, when a Gate terminal potential is applied, a channel is formed between the Source and Drain terminals, allowing electrons to flow from the Source to the Drain, thereby allowing the transistor to conduct current.
The MOSFET RUM002N02T2L has a high speed switching performance as it is a logic level P-channel MOSFET, meant for applications that require high-speed switching of currents between 0.02 and 2 Amperes. Besides, its 30V breakdown voltage allows it to be used as a load switch in portable equipment, and its small size is beneficial for portable applications.
The MOSFET RUM002N02T2L finds applications in many engineering and technological fields. It is primarily meant for use as a level shifter, for circuits such as audio amplifiers, interfacing with voltage-level shifters, power amplifiers, power supplies, and telecommunications equipment. It is also used as an interfacing switch in fans, transformers, and thermal sensors and as a load switch in portable multimedia devices such as CD and DVD players, computer and phone chargers, and other consumer electronics products.
The MOSFET RUM002N02T2L is ideal for low to moderate power handling applications. It can be used as an inverting amplifier, buffer, and level shifter, and it is also useful as a switch in audio amplifiers, power supplies, and power-on reset circuits. In addition, it can be used as an interface switch in ICs such as controllers, analog-to-digital converters, digital-to-analog converters, and microcontrollers.
In conclusion, the MOSFET RUM002N02T2L is a versatile and economical switch which is suitable for many applications. With a drain-source breakdown voltage of 30V and a 2A drain current, the MOSFET is the perfect choice for low to moderate power switching applications. Its fast switching speed and small size makes it a popular choice for consumer electronics and computing products, as well as for many automotive applications.
The specific data is subject to PDF, and the above content is for reference
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