RUR020N02TL Discrete Semiconductor Products |
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| Allicdata Part #: | RUR020N02TLTR-ND |
| Manufacturer Part#: |
RUR020N02TL |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 20V 2A TSMT3 |
| More Detail: | N-Channel 20V 2A (Ta) 540mW (Ta) Surface Mount TSM... |
| DataSheet: |  RUR020N02TL Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.11129 |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Package / Case: | SC-96 |
| Supplier Device Package: | TSMT3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 540mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 10V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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RUR020N02TL is a member of the AF35 family of n-channel enhancement mode power field-effect transistors produced by N-Channel. It is used in a wide array of applications, and its working principle is based on that of the standard field-effect transistor.
The standard field-effect transistor (FET) is composed of three terminals - the gate, the source, and the drain. These terminals are connected to a conducting channel composed of n-type semiconductor material. The electric current flows through the channel between the source and drain terminals - when a positive voltage is applied to the gate terminal, the electric current can flow, or "enhancement mode" as it is known. The electric current is regulated by the voltage applied to the gate terminal.
RUR020N02TL is an improved version of the FET, with its enhancement mode threshold set at a lower voltage level than the standard FET. This makes it ideal for applications requiring a higher current flow for a given gate voltage. It also has a higher breakdown voltage rating and device current leakage than comparable FETs, making it highly reliable.
RUR020N02TL is suitable for hand-held and fixed applications, such as high power applications, that require low input voltage and low on-resistance. In particular, it is often used in switching power supplies, DC-DC converters, and battery protection ICs. It has a maximum junction temperature rating of 175°C and offers lower on-resistance performance than other FETs in this family, while also having a low gate charge.
RUR020N02TL has an operational temperature range of -55°C - 175°C and a voltage rating of 30V. It offers excellent performance in terms of ease of handling, low on-state resistance, and excellent switching and thermal characteristics. In addition, it is RoHS compliant and UL rated.
In summary, RUR020N02TL is a reliable and highly efficient n-channel enhancement mode power field-effect transistor, capable of providing high current flow for a given gate voltage. It is suitable for a wide array of applications and is highly reliable, with a maximum junction temperature rating of 175°C and excellent thermal characteristics.
The specific data is subject to PDF, and the above content is for reference
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