RUR040N02TL Allicdata Electronics

RUR040N02TL Discrete Semiconductor Products

Allicdata Part #:

RUR040N02TLTR-ND

Manufacturer Part#:

RUR040N02TL

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 20V 4A TSMT3
More Detail: N-Channel 20V 4A (Ta) 1W (Ta) Surface Mount TSMT3
DataSheet: RUR040N02TL datasheetRUR040N02TL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.15758
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Package / Case: SC-96
Supplier Device Package: TSMT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RUR040N02TL is a type of FET transistor, which stands for Field Effect Transistor. It is part of the single source family and was created by a semiconductor manufacturer, Rohm Semiconductor. This type of transistor is commonly used in a variety of applications, such as for power amplification and for low-impedance signal switching. As it is a MOSFET, or Metal Oxide Semiconductor, it is also referred to as an insulated gate bipolar transistor.

The construction of the transistor makes it particularly advantageous for its use in many applications. It is formed from a single source of silicon, so it is much better than other FET transistors when it comes to managing sudden power surges. It also has a very low resistance in comparison to other transistors, so it can be used in applications where a fast response is needed. The output signal is stable regardless of load, making it perfect for use in signal or power switching applications.

In terms of power usage, the RUR040N02TL is incredibly efficient. It has low capacitance and low on-state resistance, which means it uses less power than many competing transistors. It also features a built-in over-voltage protection, which helps to protect it against unexpected power fluctuations. This can be especially important for applications that may experience higher-than-normal current usage.

When it comes to working principle, the RUR040N02TL operates using the only two-terminal field effect device. As it is a single source transistor, it works on the principle of having only one conductive channel through which current passes from the source to the drain. The gate voltage controls the amount of current that is allowed to pass through the channel. When the gate voltage is increased, the current is increased and vice versa. This principle makes it ideal for powering applications that require varied output current.

The RUR040N02TL is commonly used in a variety of applications, ranging from radio-frequency amplifiers and high-frequency switching to analog signal conditioning and power switching applications. It is also used in computers and other digital equipment. Its single-source construction makes it especially versatile and reliable, as its low on-state resistance and protection from overloads makes it well-equipped to handle heavy usage.

The RUR040N02TL is one of the most common FET transistors and is widely used in many applications. Its uniquely-designed construction allows it to be used in applications where other transistors may not be suitable. Its low power consumption means that it is also great for situations where energy consumption needs to be kept to a minimum. The RUR040N02TL is an incredibly effective transistor, and its long-lasting design makes it a popular choice among consumers.

The specific data is subject to PDF, and the above content is for reference

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