RW1E015RPT2R Datasheet/PDFThe RW1E015RPT2R is a single N-Channel Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is specifically designed for use in Telecom, Server, Desktop and Notebook computer power supply and other high performance applications. It combines the low rDS(ON)， low gate charge, low threshold and low on-state resistance for meeting the high efficiency requirements for server systems.
Applications
The RW1E015RPT2R is ideal for use in switching converter applications such as Desktop and Notebook computer power supplies as well as in other applications where efficiency is an important factor such as Telecom, Server and Networking switchmode supplies. Moreover, it is also suitable for load-switched Communications, Imaging, Automotive, ATE and AI.
Working Principle
MOSFETs are based on a three-terminal, voltage-controlled device referred to as a metal-oxide-semiconductor field-effect transistor which utilizes the thin-oxide, inverted-channel structure formed in the gate oxide. When a voltage is applied to the Gate-Source terminal of the RW1E015RPT2R, electrons (also known as ‘free electrons’) align on the surface of the dielectric, creating an inversion layer or ‘channel’ through which current can flow from the Drain to the Source terminal.
The advantage of the MOSFET over the BJT is that it has better output impedance characteristics, a higher input impedance, a higher gain-bandwidth product, and it requires less driving power. The RW1E015RPT2R also provides a higher breakdown voltage compared to a BJT, enabling more power to be handled with a single MOSFET.
The RW1E015RPT2R is also capable of withstanding high temperatures and high gate voltages while still providing high efficiencies at low and high frequencies. This makes it particularly suitable for use in high temperature and power hungry applications, such as in Switch Mode Power Supplies (SMPS).