RW1E025RPT2CR Discrete Semiconductor Products |
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| Allicdata Part #: | RW1E025RPT2CRTR-ND |
| Manufacturer Part#: |
RW1E025RPT2CR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 30V 2.5A WEMT6 |
| More Detail: | P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6... |
| DataSheet: |  RW1E025RPT2CR Datasheet/PDF |
| Quantity: | 8000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 75 mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 700mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-WEMT |
| Package / Case: | SOT-563, SOT-666 |
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Transistors - FETs, MOSFETs - Single
The RW1E025RPT2CR is a single N-Channel Partition Mosfet which is an advanced version of the ordinary metal oxide semiconductor field effect transistor (MOSFET). It is designed to meet the requirements of low cost, high speed, and low power applications. It is mainly used in fields such as power management and switching, audio amplifiers, instrumentation circuitry, optical communication systems, digital-to-analog convertors, and high frequency power amplifiers.
Working Principle
The RW1E025RPT2CR MOSFET is designed around the principle of a metal gate control of a gate electrode that is insulated from the source and drain (channel). This type of MOSFET has two terminals, the gate and the source, with the gate controlling the flow of electrons (carriers) between the source and the drain. When a voltage is applied to the gate, electrons in the channel between the source and the drain become attracted to the gate. This increases the potential barrier between the source and the drain and reduces the flow of current between the two. This type of control allows for faster switching than conventional MOSFETs, since the electric field from the gate electrode reaches all corners of the transistor, reducing the time required for gate current to vary the amount of current flowing between the source and the drain.
Application Field
The RW1E025RPT2CR is designed for use in various fields like laptops, personal computers, embedded system, smart sensors, and digital systems. As a power control device, the RW1E025RPT2CR is commonly used in DC motors and other applications requiring fast-switching speeds and efficient operation. It is also used in applications that requires low-threshold voltage and low on-state resistance. Its low threshold voltage makes it suitable for driving gates of integrated load switches and voltage regulators to maximize their performance. Additionally, its high switching speeds enables it to be used in high speed audio, instrumentation, and optical communication systems.
The RW1E025RPT2CR\'s main features include its low on-resistance and fast switching time. This makes it an ideal choice for a wide range of applications that require low on-resistance and fast switching time. Its low on-resistance results in high efficiency, as well as low dissipation, making it an efficient choice for electrical power control applications. Moreover, its fast switching time enables it to perform quick and precise switching operations, which could be utilized in the fields of instrumentation, audio amplifiers, and optical communication systems.
Thus, the RW1E025RPT2CR is a single N-Channel Partition Mosfet that can offer precise and high speed control in various application fields. This MOSFET utilizes advanced technology, which makes it an effective choice for a wide range of applications that requires high speed, low on-resistance, and efficient functioning.
The specific data is subject to PDF, and the above content is for reference
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