RZF020P01TL Discrete Semiconductor Products |
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| Allicdata Part #: | RZF020P01TLTR-ND |
| Manufacturer Part#: |
RZF020P01TL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 12V 2A TUMT3 |
| More Detail: | P-Channel 12V 2A (Ta) 800mW (Ta) Surface Mount TUM... |
| DataSheet: |  RZF020P01TL Datasheet/PDF |
| Quantity: | 3000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 4.5V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 6V |
| FET Feature: | -- |
| Power Dissipation (Max): | 800mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TUMT3 |
| Package / Case: | 3-SMD, Flat Leads |
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The RZF020P01TL MOSFET is a very popular choice for a variety of applications. It is an N-channel MOSFET, and has a drain-source rating of 20V and a current capacity of 1A. Its gate-source rating is 8V, and it has an on-resistance of 10 Ohms. The RZF020P01TL has a very linear threshold voltage of 2.1V, and it is a perfect choice for low-power applications, as the on-resistance is low. It also has a very low capacitance of less than 1pF.
The main applications for the RZF020P01TL are digital/analog switching, load switching, as well as in various types of amplifier circuits. It can also be used in various types of power supply designs. The MOSFET is particularly well-suited for pulse-width modulation (PWM) applications, as the low on-resistance and linear threshold voltage allow for precise switching control. The RZF020P01TL can also be used in an inductive load driver circuit, and can be used to drive high-current loads in a highly efficient manner.
The RZF020P01TL MOSFET works on the principle of electrostatic field-effect transistor (FET) action. It consists of three layers of semiconductor material, the source and the drain, separated by an insulating gate. When a positive voltage is applied to the gate, it creates a conductive channel between the source and the drain, which allows current to flow. The gate voltage controls the size of the channel, and the current flow. The larger the gate voltage, the larger the size of the channel, and the higher the current flow.
The RZF020P01TL MOSFET also has protection against over current and over-voltage protection. It has a drain-source voltage rating of 20V and a gate-source voltage rating 8V. This helps in protecting the device from damage due to over current or over voltage. The device can also withstand reverse voltages up to 30V, which makes it suitable for a wide range of applications.
The RZF020P01TL is a great choice for a wide range of applications and offers a wide range of features. It is a great choice for applications that require a low on-resistance, linear threshold voltage, and overvoltage/overcurrent protection. The device is also highly robust and offers excellent protection against reverse voltages.
The specific data is subject to PDF, and the above content is for reference
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