RZF030P01TL Discrete Semiconductor Products |
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Allicdata Part #: | RZF030P01TLTR-ND |
Manufacturer Part#: |
RZF030P01TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 12V 3A TUMT3 |
More Detail: | P-Channel 12V 3A (Ta) 800mW (Ta) Surface Mount TUM... |
DataSheet: | RZF030P01TL Datasheet/PDF |
Quantity: | 10000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1860pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT3 |
Package / Case: | 3-SMD, Flat Leads |
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The RZF030P01TL is a single N-Channel MOSFET, manufactured by the Toshiba Electronics Corporation. This FET is part of Toshiba\'s "Focused on Power" series and is designed to provide higher performance and higher junction temperature service within a narrow range of gate voltage characteristics. The RZF030P01TL is also designed to maintain low resistance and superior switching characteristics at high frequencies. With its low Rds(on) and low gate charge, the RZF030P01TL is well suited for switching applications.
The RZF030P01TL operates by applying a small voltage to its gate, which controls the flow of current through the channel between the source and the drain. The gate voltage is proportional to the drain current in that the lower the voltage applied to the gate, the more current will flow between the source and the drain. When the gate voltage is increased, the drain current decreases because the MOSFET’s drain-gate resistance increases. The current through the channel can be controlled by a larger gate-source voltage, which can either increase or decrease the drain current depending on the polarity of the voltage.
Because of its low on-resistance, the RZF030P01TL can also be used in switching circuits. Switching circuits are useful for controlling the speed at which devices operate, or for controlling the amount of current that is supplied to a device. The RZF030P01TL can be used in a typical switch circuit to control the amount of current flowing between the source and the drain. Additionally, the RZF030P01TL’s low on-resistance makes it well suited for use in high-frequency switching circuits.
The RZF030P01TL is commonly used in a variety of applications that require a small, low-resistance FET, such as power amplifier circuits, high-speed motor control circuits, motor driver circuits, pre-driver circuits, and switching regulator circuits. Additionally, the RZF030P01TL’s low resistance enables it to be used in power conversion circuits for extra efficiency.
To sum up, the RZF030P01TL is a single N-Channel MOSFET, designed by Toshiba Electronics Corporation. The FET features low resistance and excellent switching characteristics. It is commonly used in amplifier circuits, motor control circuits, and power conversion circuits, and can be used in high-frequency switching applications. Overall, the RZF030P01TL is a highly efficient and reliable power FET for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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