RZM001P02T2L Allicdata Electronics

RZM001P02T2L Discrete Semiconductor Products

Allicdata Part #:

RZM001P02T2LTR-ND

Manufacturer Part#:

RZM001P02T2L

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 20V 0.1A VMT3
More Detail: P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: RZM001P02T2L datasheetRZM001P02T2L Datasheet/PDF
Quantity: 112000
8000 +: $ 0.02318
Stock 112000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
FET Feature: --
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VMT3
Package / Case: SOT-723
Description

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The RZM001P02T2L is a surface-mount L-shaped Dual N-Channel MOSFET with low on-resistance. It is suitable for use in a wide range of digital applications including DC-DC conversion, battery management, and power switches. With a 700 V breakdown voltage and an on-resistance (RDS(ON)) of 5mΩ, the RZM001P02T2L offers excellent performance in a small package.

A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a type of transistor used in integrated circuits. It uses two electrical properties to amplify or switch electrical signals. The first property is the transistor\'s gate-source voltage (VGS), which controls the conductivity of the channel between the source and the drain of the transistor. The second property is the transistor\'s drain current (ID), which is determined by the amount of current flowing through the channel.

A Dual N-Channel MOSFET is a type of MOSFET that has two N-type channels. N-type channels are created by introducing a layer of negative carriers, such as electrons, at the transistor\'s gate terminal. A Dual N-Channel MOSFET is often used in digital applications, as it can switch both digital signals and low-current DC signals. The RZM001P02T2L is suitable for a wide range of such applications because of its low on-resistance (RDS(ON)).

The RZM001P02T2L MOSFET is often used in DC-DC conversion applications. DC-DC converters convert a DC input voltage to a different DC output voltage. This is often necessary for battery management systems, as the output voltage of a battery needs to be regulated. The RZM001P02T2L’s low on-resistance and high breakdown voltage makes it well-suited for DC-DC conversion.

The RZM001P02T2L MOSFET is also commonly used in power switch applications. A power switch is an electronic switch that enables or disables the flow of current in an electrical circuit. It is often used in power management systems to regulate the flow of current in a circuit. The low on-resistance of the RZM001P02T2L makes it ideal for power switch applications, as it ensures minimal power loss.

The RZM001P02T2L is a versatile, efficient, and reliable MOSFET that can be used in a variety of applications. Its low on-resistance and high breakdown voltage make it well-suited for a range of digital applications, including DC-DC conversion, battery management, and power switches. Thanks to its small size, it is almost universally applicable, making it a popular choice for engineers and designers.

The specific data is subject to PDF, and the above content is for reference

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