RZM002P02T2L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	1.4nC @ 4.5V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	115pF @ 10V
FET Feature:	--
Power Dissipation (Max):	150mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	VMT3
Package / Case:	SOT-723

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RZM002P02T2L Application Field and Working PrincipleRZM002P02T2L is a single FinFET transistor which belongs to the field-effect transistor (FET) family. FETs are active components which allow the user to control electric signals by applying an external voltage. FETs are similar to bipolar transistors in that they can amplify or switch electronic signals, but they have significant advantages over bipolar transistors in terms of power efficiency, size, speed, and noise performance.RZM002P02T2L is an ideal transistor for various application fields due to its features. The device features a gate size of 2.2 square millimeters, an on-state RDS(on) of 1.2 ohm and an avalanche energy of 1.5 J. It is a fast switching transistor which is suitable for power regulation, energy saving, and automotive applications.The working principle of FETs is based on the phenomenon of electrons and holes in semiconductors that can be controlled with an electric field. The most commonly used type of FET is a Metal–Oxide–Semiconductor FET (MOSFET). In its basic form, a MOSFET consists of three terminals: the gate, the source, and the drain. The gate terminal controls an electric field that is applied to the channel located between the source and drain terminals. This electric field controls the flow of electrons and holes to the channel and their escape from the channel.The source terminal is the point of entry for electrons into the channel and the drain terminal is the point of escape. The gate-to-source voltage (VGS) determines the operation of a MOSFET device. It modulates the conductance of the channel and, hence, the current flow through the device. The RZM002P02T2L operates over the range of -2.5 to -8 V.To understand the operation of a MOSFET, let’s take a look at its structure. A MOSFET consists of several components, including a gate electrode, a gate insulation layer, and a semiconductor channel. The gate electrode is a thin metal plate formed on the surface of the semiconductor wafer that lies between the gate insulation layer and the channel. The gate insulation layer is an insulating material such as silicon dioxide or polysilicon that separates the gate electrode from the channel.When a negative voltage is applied to the gate terminal, the free electrons in the channel move away from the gate. This reduces the conductance of the channel and, thus, the current flow through the device. This is referred to as the Triode Region. When a positive voltage is applied to the gate, the electrons in the channel move towards the gate and the conductance of the channel increases. This is referred to as the Saturation Region.The RZM002P02T2L is a highly efficient FET capable of switching between the triode and saturation states at high speed. Its low RDS(on) and avalanche energy makes it an ideal device for power regulation, energy saving, and automotive applications.

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