RZQ045P01TR Discrete Semiconductor Products |
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| Allicdata Part #: | RZQ045P01TR-ND |
| Manufacturer Part#: |
RZQ045P01TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 12V 4.5A TSMT6 |
| More Detail: | P-Channel 12V 4.5A (Ta) 1.25W (Ta) Surface Mount T... |
| DataSheet: |  RZQ045P01TR Datasheet/PDF |
| Quantity: | 3000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4.5A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 4.5V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2450pF @ 6V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1.25W (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TSMT6 (SC-95) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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The RZQ045P01TR is one of the latest MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) to be released in the market today. It has a wide range of applications and is used in a variety of electronic circuits. This MOSFET is quite versatile and is a great choice for applications that require high power efficiency and reliability. In this article, we will take a look into the application field and working principle of this MOSFET.
Application Field of RZQ045P01TR
The RZQ045P01TR is designed for a wide range of applications such as:
- Power conversion and motor control
- Telecommunications applications
- Audio amplifiers
- High frequency switching circuit designs
This MOSFET has the ability to efficiently handle a wide range of current and voltage levels, making it an ideal choice for many different power conversion and motor control applications. It can be used in high frequency switching circuits, as well as audio amplifiers, offering great performance and reliability.
Working Principle of RZQ045P01TR
The RZQ045P01TR is an N-channel MOSFET, meaning that current flows through the device when a voltage is applied to the Gate. When the Gate is positively charged, electrons will move to the channel and through the Drain-Source, creating a path for current to pass through. The current will then flow through the body to the Source and eventually to ground. The MOSFET is considered “on” when the Gate voltage is greater than the threshold voltage and “off” when the Gate voltage is below the threshold voltage.
The RZQ045P01TR is also equipped with a dual-gate technology, which means that it has two gates for controlling current flow. This technology allows for higher power efficiency and better control of the current, making it suitable for applications such as audio amplifiers and high frequency switching circuits.
Conclusion
To conclude, the RZQ045P01TR is a versatile MOSFET that can be used in a variety of applications. Its N-channel design, dual-gate technology, and high power efficiency provide a great solution for motor control, telecommunications applications, high frequency switching, and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RZQ045P01TR | ROHM Semicon... | -- | 3000 | MOSFET P-CH 12V 4.5A TSMT... |
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