RZQ050P01TR Discrete Semiconductor Products |
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| Allicdata Part #: | RZQ050P01TR-ND |
| Manufacturer Part#: |
RZQ050P01TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 12V 5A TSMT6 |
| More Detail: | P-Channel 12V 5A (Ta) 600mW (Ta) Surface Mount TSM... |
| DataSheet: |  RZQ050P01TR Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2850pF @ 6V |
| FET Feature: | -- |
| Power Dissipation (Max): | 600mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TSMT6 (SC-95) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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RZQ050P01TR is a single 30V, 4.5A N-Channel enhancement type MOSFET transistor. This device is based upon advanced trench technologies for greater performance and better robustness in a wide variety of applications. The transistor is a type of FET (Field Effect Transistor) that is used for switching, amplifying, and controlling electrical signals in electronic circuits. The device is characterized by its low drain source on-state resistance and is suitable for use in applications such as switching and power/audio amplifiers.
In terms of application fields, RZQ050P01TR is suitable for use in high-reliability and high-side voltage applications. It is suitable for use in audio and power amplifiers, DC-DC converters, general switching circuits, and other high-voltage applications. The device is also suitable for use in automotive, audio, and power supply applications.
The working principle of RZQ050P01TR is relatively simple. The transistor works on the principle of the movement of electrons between two conductors in a semiconductor material. In the case of an N-channel enhancement type MOSFET, electrons are moved from the source to the drain using an electric field generated by an applied voltage between the gate and the source. When a positive voltage is applied between the gate and source of the transistor, it permits electrons to be transferred from the source terminal to the drain terminal, thus completing the circuit. When the source to drain voltage exceeds the threshold voltage of the MOSFET, current flows freely from the source to the drain.
RZQ050P01TR is one of the most popular MOSFET transistors available on the market today. It is highly reliable, making it suitable for use in a wide range of applications. The device is capable of delivering high power output, low on-state resistance, and excellent switching performance. Due to its versatility and wide range of applications, the RZQ050P01TR is suitable for use in a variety of applications, including automotive, audio, and power supply applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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