RZR020P01TL Discrete Semiconductor Products

The RZR020P01TL is a MOSFET suitable for high power applications. It has a wide range of uses in high-power motor control, power supply/regulator circuits, and power conditioning. The device has a low on-resistance (RDS(on)) rating between 3.7mΩ and 16.1mΩ when VGS of 4.5V and Drain-Source voltage of 20V are applied. The device also has a maximum Drain current rating of 80A and an avalanche rating of 175A.
The RZR020P01TL is part of a family known as RZR series of discrete MOSFETs, which are designed for applications that require low RDS(on) and high current capacity. The RZR series of MOSFETs use the same design structure and manufacturing process as other MOSFETs but with additionalsilicon oxide layers that improve the device\'s current-carrying capacity and switching speed.
The working principle of the RZR020P01TL is based on the principle of MOSFETs (metal-oxide-semiconductor field-effect transistors). This type of transistor is a voltage-controlled device that switches on or off power to an electronic circuit when a current is applied to the gate. In the case of the RZR020P01TL, the MOSFET structure consists of a source, a gate, and a drain, which are surrounded by an insulation layer made up of gate oxide. When a current is applied to the gate, the gate capacitance charges and creates an electric field that attracts electrons from the source and pulls them through the gate oxide towards the drain. This process, known as "field effect", is how the RZR020P01TL switches on and off power to a circuit.
The RZR020P01TL can be used in a variety of applications where high switching speeds and low on-resistance are required. It is commonly used in motor control circuits where fast switching speeds, high current capacity and low on-resistance are desirable. It can also be used in power supply and voltageregulator circuits, as well as in power conditioning circuits that require low switching losses.
The RZR020P01TL has many advantages, such as low on-resistance and high current carrying capacity, which make it ideal for power circuits and motor control applications. Additionally, its relatively low gate charge enables it to switch quickly, which makes it suitable for high speed applications. Its enhanced silicon oxide layers also ensure high reliability and long-term device performance.
In conclusion, the RZR020P01TL is a MOSFET suitable for high speed, high current and low on-resistance applications. Its features, such as its low gate charge and low on-resistance rating, make it ideal for motor control and power conditioning circuits. Its enhanced silicon oxide layers also ensure enhanced reliability and long-term performance.

RZR020P01TL	ROHM Semicon...	--	3000	MOSFET P-CH 12V 2A TSMT3P...
RZR025P01TL	ROHM Semicon...	--	3000	MOSFET P-CH 12V 2.5A TSMT...
RZR040P01TL	ROHM Semicon...	0.2 $	100	MOSFET P-CH 12V 4A TSMT3P...