RZR040P01TL Discrete Semiconductor Products |
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| Allicdata Part #: | RZR040P01TLTR-ND |
| Manufacturer Part#: |
RZR040P01TL |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 12V 4A TSMT3 |
| More Detail: | P-Channel 12V 4A (Ta) 1W (Ta) Surface Mount TSMT3 |
| DataSheet: |  RZR040P01TL Datasheet/PDF |
| Quantity: | 100 |
| 3000 +: | $ 0.17439 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2350pF @ 6V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1W (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TSMT3 |
| Package / Case: | SC-96 |
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The RZR040P01TL is a FET and MOSFET that has a single channel configuration. It is manufactured by On Semiconductor and is commonly used in industrial applications. The device is designed with a low voltage operation, making it ideal for use in microcontrollers and low power applications.
The RZR040P01TL is a N-channel MOSFET, which stands for metal oxide semiconductor field-effect transistor. The device has a maximum drain current of 40 amperes (A) at 25-degrees Celsius. It is usually used as a power switch in industrial applications, as it can support high current loads and has low on-resistance.
The RZR040P01TL has an internal source-drain diode which, when activated, helps to prevent reverse currents. This diode is a protection mechanism in case of a switch over circuit, so that a surge in the voltage does not occur. The RZR040P01TL also has an Excelon Polymer Dielectric which is a high stability insulation material, and a self-aligned gate processes, which limit the need for manual alignment.
The RZR040P01TL features a low turn-on gate threshold voltage. This makes it ideal for use in digital circuits, as it does not require high gate control voltages to switch it on and off. The device has a drain-source breakdown voltage of 40 volts (V) and operates at temperatures ranging from –55 to 150 degrees Celsius. Additionally, it has an impressive temperature impedance, meaning its power dissipation is relatively unaffected by temperature changes.
The RZR040P01TL works by allowing/blocking the flow of current when an electric field is applied to it. When a voltage is applied to the gate terminal, the transistor is switched on and current will flow through its channel. When the voltage at the gate terminal is removed, the transistor switches off and current will not flow. This switching operation is used to control other parts of the circuit.
The RZR040P01TL is a versatile device and is widely used in a variety of applications. For example, it is used in automatic robot hands, remote-controlled vehicles, and automated security systems. It is also useful in LED lighting applications and home appliances, such as ovens, microwaves, and washing machines.
In summary, the RZR040P01TL is a N-channel MOSFET that is perfect for controlling large currents in small circuits. It features a low gate threshold voltage and a high drain-source breakdown voltage, making it well suited for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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