S26KS128SDABHN030 Allicdata Electronics
Allicdata Part #:

S26KS128SDABHN030-ND

Manufacturer Part#:

S26KS128SDABHN030

Price: $ 6.43
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 24FBGA
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 100...
DataSheet: S26KS128SDABHN030 datasheetS26KS128SDABHN030 Datasheet/PDF
Quantity: 68
1 +: $ 5.84010
Stock 68Can Ship Immediately
$ 6.43
Specifications
Series: HyperFlash™ KS
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Access Time: 96ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)
Description

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The S26KS128SDABHN030 is a memory device that provides an ideal solution for a variety of embedded applications, including small-form-factor designs that are commonly used in industrial, automotive, medical, and consumer markets. This device is an 8K x 16 bit Static RAM that has a unique combination of features, including low power consumption and high density. It also provides a high-speed operation and a wide temperature range, making it ideal for use in mission-critical systems.

In addition to its low power needs and high density, the S26KS128SDABHN030 also features a small form factor, making it an ideal choice for designers looking for a memory solution with a small physical footprint. The device is also highly flexible, allowing designers to use the product in a variety of applications and environments.

The S26KS128SDABHN030 is an 8K Static RAM that is based on a single-bit architecture. This means that the data stored in the device consists of one bit of information for each memory address. This type of memory is commonly used for storing data that does not change frequently, as the data is retained even when power is removed from the device.

The S26KS128SDABHN030 device offers a number of benefits to users, including its high density, small form factor, and low power needs. Additionally, the device is designed to operate at a wide temperature range and provides a high-speed operation, making it ideal for applications that require fast data access.

The S26KS128SDABHN030 is also designed with a number of features intended to protect the memory device from external damage. This includes a built-in ECC (error correction code) that can detect and correct any errors that might be present in the data. Additionally, the device is designed to detect any defects that might be present in the memory device.

When it comes to applications, the S26KS128SDABHN030 is well-suited for a variety of embedded systems. These applications include automotive, consumer, industrial, medical, and military applications. Additionally, this device is often used in embedded applications that are used in space exploration and satellite communication.

The S26KS128SDABHN030 is a particularly attractive option for designers of mission-critical systems. This is because the device is designed to overcome the issues associated with dynamic RAM. In addition, the device is designed to provide a high level of reliability and data protection.

Overall, the S26KS128SDABHN030 is an ideal choice for a wide range of memory needs. With its low power needs, high density, and wide temperature range, the device is well-suited for a number of applications. Additionally, the device is designed to provide users with a reliable, high-speed operation and protection from external damage.

The specific data is subject to PDF, and the above content is for reference

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