S26KL512SDABHN020

Memory

The S26KL512SDABHN020 is a 65-nanometer (nm) stand-alone memory solution that provides low-power, high-performance, extended interface options. This SRAM solution is ideal for general purpose applications such as wearables, mobile devices, embedded system development, and consumer electronics that require low power, extended temperature range, and reliable data storage.

Application field

The S26KL512SDABHN020 is a versatile memory solution that can be used in a variety of applications. It is ideal for embedded systems requiring low-power, high-performance memory. This SRAM can also be used for consumer electronics, medical devices, automotive applications, and industrial applications. It is a reliable, non-volatile solution that can be integrated into a wide range of applications.

The S26KL512SDABHN020 is designed for low-power, high-performance applications. Its 65-nanometer process technology reduces current draw, allowing for enhanced power-saving capabilities. This SRAM also features a temperature range of –55 to +125°C, making it a durable and reliable solution for industrial and automotive applications.

Working Principle

The S26KL512SDABHN020 is a stand-alone memory solution that features an interface and control logic to allow access to stored data. This SRAM is based on a core SRAM cell that is connected to an array of address decoding, write enable, and data out/input buffers. The core SRAM cell is composed of two inverters, two pass-transistors, two capacitors, and two clock switches.

The two pass-transistors, the doors which allow data to enter or leave the cell, are controlled by the Memory Controller’s write enable and read enable signals. With the write enable signal, the cell can accept write data from outside the SRAM. With the read enable signal, the cell outputs the stored data to outside the SRAM. The capacitor stores the data which is to be read or written, maintained at a certain voltage level.

The write enable and read enable signals are controlled by the Memory Controller that drives the device through the address bus, data bus, and control bus. The Memory Controller provides read/write commands and assigns address locations to the SRAM cell, which is connected to a 16-level address buffer. The data is transferred from the Memory Controller to the SRAM cell through the data bus.

The S26KL512SDABHN020 is designed to provide low-power, high-performance and reliable data storage for various applications. Whether the application is embedded systems, automotive, or medical, this SRAM can provide the perfect low-power, high-performance, and reliable memory solution.