S26KS256SDGBHI030

S26KS256SDGBHI030 is a 2-3 GHz, 16-bit SRAM device, which provides an ideal solution for high-speed applications requiring low latency, high throughput and high density memory. It is a high-speed, low power and reliable memory device with superior performance, excellent signal integrity and timing flexibility.

The S26KS256SDGBHI030 is a high-performance, low-voltage 16-bit Static RAM (SRAM) for a wide range of applications. It offers a single-ended interface for memory access and is organized as two banks of 8M words. In addition, the device features a 3.3-V power supply and can operate from 1.65 to 1.95 V.

The device has many advantages over traditional SRAMs, such as the reduced power consumption, higher speeds and lower latencies. Additionally, it has flexible timing control, allowing for simple system configuration and supports a high data rate transmission up to 320Mb/s. Additionally, its vast array of address pins reduces noise and increases memory availability.

Application Fields of S26KS256SDGBHI030

The S26KS256SDGBHI030 memory device is well-suited for a variety of applications, including:

• Data buffering
• Caching of application data
• Real-time processing tasks
• High-speed memory storage
• High-speed data transfer to external media
• Data clustering and organization
• Software applications
• Telecommunications
• Networking
• Industrial control

Working Principle of S26KS256SDGBHI030

The S26KS256SDGBHI030 memory device is based on an asynchronous access architecture, allowing for fast and independent operation of different cells from each other. Each cell is addressed through a logic signal on the M address bus and requires a logic transition to the Vcc supply. This transition is detected and latched by the sense amplifier, resulting in a precharged word line.

The word line is then discharged to enable cell access and the 16-bit Read/Write operation occurs through a data bus. After the operation has completed, the sense amplifier flags are re-evaluated and the word line is precharged again. This operation is Continuous and non-stop.

The S26KS256SDGBHI030 device supports an array of features including advanced write enable protection, burst read and burst write operations, write protect and ECC protection. It also supports up to four clock enable and high-speed output enable push-pull outputs.

Conclusion

The S26KS256SDGBHI030 is a versatile, low-voltage 16-bit SRAM that is ideal for high-speed applications requiring low latency, high throughput and high density memory. It has a flexible timing architecture, providing simple system configuration, and its enhanced memory availability, speed and power consumption make it one of the most reliable memory devices on the market.