S26KL256SDABHN030

The S26KL256SDABHN030 is a 256-megabit (32 megabytes) synchronous static random access memory (SRAM) device designed for high speed, low power applications. It is available in a wide variety of configurations and operating voltages, making it suitable for many different system requirements. As a result, the S26KL256SDABHN030 is used in a wide variety of applications including networking and communications, automotive, industrial, medical, and other applications where low power, high speed memory is required.

The S26KL256SDABHN030 is organized as a single array of 256 megabits, with a total of 32 megabytes of memory. It is available in three different configurations: a x16 configuration, a x8 configuration, and a x32 configuration. Each configuration has its own unique advantages and disadvantages depending on the application requirements. The x16 configuration is the highest performance configuration and is used most often in embedded systems, especially where low power is critical. The x8 and x32 configurations offer lower performance but require less power.

The S26KL256SDABHN030 operates with a supply voltage ranging from 1.7V to 3.6V, with a maximum operating frequency of 266 MHz. It is packaged in an industry-standard SOJ contact form, making it suitable for use in a wide variety of systems. The device has a typical power dissipation of 400 mW (at 1.8V) and can tolerate a temperature range of -40°C to 85°C.

The S26KL256SDABHN030 uses a synchronous static random access memory (SRAM) architecture with static CMOS (complementary metal-oxide-semiconductor) logic. This combination of memory and logic allows for fast access times while still providing low power characteristics. The device is organized as an array of 16 megabits (2 megabytes). The array is addressed by a row address and a column address. Each row or column can be accessed in one read or write operation. This allows for fast access times and data transfer rates up to 266 MHz.

In terms of features, the S26KL256SDABHN030 has several options available. It supports burst mode operation for higher throughput and access time, programmable output drive strength for balanced power and performance, a write protect pin for write protection, and an asynchronous reset pin for ease of use.

The S26KL256SDABHN030 is a highly versatile memory device with a wide range of applications. It is capable of low power operation, high performance, and can be used in many different types of systems. It is particularly useful in embedded systems where low power and high speed are both critical factors. Additionally, its wide selection of configurations, operating voltages, and packaging makes it suitable for a variety of different applications.