S29AL016J70BFI012 Allicdata Electronics
Allicdata Part #:

S29AL016J70BFI012-ND

Manufacturer Part#:

S29AL016J70BFI012

Price: $ 1.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 16M PARALLEL 48FBGA
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Paral...
DataSheet: S29AL016J70BFI012 datasheetS29AL016J70BFI012 Datasheet/PDF
Quantity: 1000
800 +: $ 1.13371
Stock 1000Can Ship Immediately
$ 1.25
Specifications
Series: AL-J
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)
Description

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S29AL016J70BFI012 is a type of memory, which is widely used in embedded system and storage application. It is a high speed and low power consumption memory device, with 1Mbits of storage. This device provides a high speed interface, facilitating storage of code, data, and configuration parameters in the embedded system environment for better system performance. It has become a popular choice for many electronic products as it delivers an improved level of reliability, durability, and performance.

S29AL016J70BFI012 application fields include automotive, aerospace, medical imaging, telecom, industrial automation, etc. As it supports both clock and non-clock operation modes, it can be used in various embedded system applications, such as automotive infotainment, driver assist applications, Active Safety & Prevention systems, advanced, industrial automation, medical imaging, communication and networking, etc.

The working principle of S29AL016J70BFI012 can be explained as follows. It is a nonvolatile magnetic field random access memory (MRAM) consisting of a single plane of memory array, comprising 1 million non-volatile cells, which are arranged in a square grid filled with ferrite and insulator material. Each cell consists of two layers of magnetic material separated by an insulator and forms a magnetic tunnel junction which is capable of storing and retrieving data. When a current is applied to the cell, a closed and stable magnetic arrangement is created. This serves as the write state of the cell, indicating data stored in this state. Upon removal of the current, the magnetic configuration becomes disturbed, thus becoming the read state. By alternating between the write and read states, digital information is stored and accessed from the cell.

Additionally, S29AL016J70BFI012 consumes a very low voltage, which is typically 10V or less. The read, write and erase operations of the device occur with most commands, so there is no need for extra memory programming. Furthermore, it supports multiple programming option, making it a flexible and reliable platform for various applications. Furthermore, It features a dual boot configuration, enabling two different boot images to be stored on the same memory device. This provides better system performance and flexibility.

In conclusion, S29AL016J70BFI012 is a versatile and reliable type of memory, providing improved performance and reliability for different embedded systems and storage applications. Its high speed interface, low power consumption and flexible programming options makes it a popular choice for many electronic products. Due to its compact size and multiple programming options, it is an ideal solution for automotive, aerospace, medical imaging, telecom, industrial automation and other applications.

The specific data is subject to PDF, and the above content is for reference

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