Allicdata Part #: | S29AL008J70WEI029-ND |
Manufacturer Part#: |
S29AL008J70WEI029 |
Price: | $ 0.67 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 8M PARALLEL WAFER |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para... |
DataSheet: | S29AL008J70WEI029 Datasheet/PDF |
Quantity: | 1000 |
525 +: | $ 0.60031 |
Series: | AL-J |
Packaging: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8, 512K x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Wafer |
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S29AL008J70WEI029 is a type of high speed and high performance low voltage flash memory. This type of memory is also known as a NAND memory and is primarily used in solid-state drives (SSDs). It is most commonly used in computers, storage devices, and other electronic components. The S29AL008J70WEI029 is commonly used in computers as it offers a high level of performance and reliability. The memory is also capable of reading and writing large amounts of data quickly, making it suitable for a range of applications.
The S29AL008J70WEI029 memory works on a NAND architecture, which utilizes an array of cells to store data. These cells are electrically isolated from each other, allowing for quick and easy access to the stored data. The memory itself is organized in blocks, which can consist of up to 512 pages of data. The data can be read from or written to these blocks at a very fast rate, making it ideal for applications where speed and reliability are essential.
The S29AL008J70WEI029’s application field goes beyond simply providing fast and reliable memory for computers. It is also used in a variety of electronic devices, such as mobile phones and digital cameras. The memory is able to access the data stored on the device quickly and accurately, making it a major plus for mobile devices and digital cameras. The memory is also designed to be able to effectively manage wear leveling and other wear-related issues, ensuring its performance and reliability.
The main working principle of the S29AL008J70WEI029 involves the use of a special type of transistors, known as “floating gate transistors”. These transistors are specifically designed to allow for the selection of maximum speed when there is high traffic involving the memory. This allows for quick access to the stored data. Additionally, the use of floating gate transistors also enables the memory to effectively detect errors and perform error correction as needed.
The S29AL008J70WEI029 is also designed for power efficiency. This ensures that the device uses a minimal amount of power to perform its tasks and offers a more reliable and lasting performance. Additionally, the memory is also suited for use in a wide range of temperatures, meaning it can be used in a variety of conditions.
In conclusion, the S29AL008J70WEI029 is a type of high speed and high performance low voltage flash memory. It is most commonly used in computers, storage devices, and other electronic components. The memory works on a NAND architecture, which utilizes an array of cells to store data. It is also capable of reading and writing data at a very fast rate, making it highly suitable for applications where speed and reliability are of utmost importance. It is also designed for power efficiency and can be used in a wide range of temperatures. Thus, the S29AL008J70WEI029 is an ideal memory for various applications.
The specific data is subject to PDF, and the above content is for reference
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