S29AS008J70BHI040 Allicdata Electronics
Allicdata Part #:

S29AS008J70BHI040-ND

Manufacturer Part#:

S29AS008J70BHI040

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 8M PARALLEL 48FBGA
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para...
DataSheet: S29AS008J70BHI040 datasheetS29AS008J70BHI040 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: AS-J
Packaging: Tray 
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)
Description

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Memory is one of the most popular components used in electrical and electronic systems, as it is used to store data and provide information. This is why it\'s essential to understand the different types of memory, their application field and working principle. The S29AS008J70BHI040 is an example of a popular and widely used type of memory, which has specific capabilities and features.

The S29AS008J70BHI040 is a type of flash memory that is used for a variety of purposes. It is developed for nonvolatile, long-term storage of data, which means that it does not require a power source to retain its contents. It is a type of memory that is often used in consumer-level electronics and applications, such as cameras, digital music players, and PDAs. This type of memory is also used in embedded systems, such as industrial automation, medical devices, and military applications.

The S29AS008J70BHI040 has a storage capacity of 8 Mbytes and is organized into 64 blocks, each of which is 512 Kbytes. The memory supports an operating voltage range of 3.3V and allows for voltage support and operation of up to 5V. It can operate at frequencies of up to 66 MHz and up to 45-nanosecond access times. It also supports byte, page, and block and random/sequential data read and page program operations.

The S29AS008J70BHI040 uses a NAND cell structure, which consists of two transistors connected in series. The two transistors are used to store the data, which can be either 0s or 1s. It is organized in the form of flash memory cells, each of which contains one bit of data. One of the advantages of the NAND cell structure is that it has a low write time, as it is specifically designed for large programming tasks.

The F29AS008J90BHI040 utilizes a standard X8 flash protocol with a command set that allows for various operations. It supports dual I/O, which is a feature that allows for simultaneous programming of the memory. It is available in various packages, such as TSOP-48, TSOP-40, SOJ-40, SDIP-32, and BGA packages.

To summarize, the S29AS008J70BHI040 is a type of flash memory that is widely used in many industries. It is designed for nonvolatile, long-term storage of data and has a storage capacity of 8 Mbytes. It utilizes a NAND cell structure, supports varying voltages, and is organized in the form of flash memory cells. Its command set also allows for various operations and is available in various packages. Thus, the S29AS008J70BHI040 is a highly capable and reliable component for many of today\'s storage needs.

The specific data is subject to PDF, and the above content is for reference

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