S29AS016J70TFI040

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S29AS016J70TFI040 memory is a single voltage NOR Flash memory to meet the embedded system design requirements. It works at a voltage of 1.8V and 1.65V and can operate at -40°C to +85°C.

The memory device of S29AS016J70TFI040 uses a high speed, low latency NOR Flash memory architecture that provides high capacity memory for embedded applications. It features 16Mbit of memory with an access time of 70ns. It has a page access time of up to 10µs for large page programming and/or erase operations. The device has an endurance of 100,000 write/erase cycles and a data retention of 20 years.

The device is suitable for a wide range of applications such as automotive systems, medical devices, digital audio and video devices, personal digital assistants and other handheld devices. It forms the core of the embedded solutions and provides a high performance and cost effective solution. It is also suitable for applications that require a high endurance, reliability and security.

The S29AS016J70TFI040 memory is particularly well suited for mobile applications in that it offers a low power standby operations with a standby power consumption of only 0.2µW. Additionally, it offers an extended temperature range which makes it ideal for automotive, medical and industrial applications. The device also operates with fast access and read speeds, making it efficient for a variety of embedded applications.

The working principle of the device is founded on a high performance, low latency NOR Flash memory architecture. This architecture provides a quick access time to memory and allows for read speeds of up to 70ns. This allows for a wide range of applications such as automotive systems, medical devices, digital audio and video devices, personal digital assistants and other handheld devices.

The S29AS016J70TFI040 memory is equipped with an on-chip erase circuitry that enables fast erase operations. This device can be fully erased in 64 pages of 256 bytes each in less than 10µs. This capability offers a significant advantage in terms of speed and efficiency in embedded applications.

The device also includes an EERPOM, which is an extendable sector protection register. This register provides an extra layer of protection to the memory data, preventing accidental adjustment of the memory content. Additionally, it adds write protection to selected blocks.

The S29AS016J70TFI040 memory is a user-friendly device, designed to be easy to use. The device has an easy-to-use command interface and an extensive selection of functionalities that make the device flexible and easy to integrate in different applications. It is also compatible with the requirements of several JEDEC memory standards.

The device also has a unique feature, an anti-fuse based data protection feature, which makes it highly secure. This feature provides an extra level of security against data tampering and theft, making it an ideal device for use in automotive applications. Additionally, the device supports hardware-based write protection, making it an ideal solution for applications that require secure data storage.

In conclusion, S29AS016J70TFI040 memory is a single voltage NOR Flash memory designed for a wide range of embedded applications, automotive systems, medical devices and other handheld devices. It features excellent access time of 70ns and a page access time of up to 10µs for large page programming and erase operations. The device also has an EERPOM for data protection, an anti-fuse based data protection feature and an extremely low power standby operations. All of these features and more makes the device an ideal solution for a variety of applications.

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