S29AL008J70BAI010

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Application Field and Working Principle of S29AL008J70BAI010

The S29AL008J70BAI010 is an 8 MB, low-voltage, 3.0V, CMOS memory manufactured by Spansion that is designed for a wide range of applications. With a small form factor, the S29AL008J70BAI010 is well-suited for a variety of memory applications, including multigigabit software radio receivers, digital television, data loggers and industrial diagnostic equipment.

Features

The S29AL008J70BAI010 offers a number of features and advantages over other memory products, including a wide range of densities, fast read and program times, a wide operating temperature range, and a high degree of packaging and data retention flexibility.

• Wide ranging densities from 8 Mb to 8 GB.
• Fast read and program times.
• Wide operating temperature range.
• High degree of packaging and data retention flexibility.

Application Fields

The S29AL008J70BAI010 is used in a wide range of applications, including memory applications, instrumentation, communications, automotive, aerospace, medical, industrial and consumer applications. It is ideal for use in wireless transmitting and receiving systems, GPRS, EDGE, Bluetooth and WiMAX systems, as well as radio frequency identification (RFID) systems.

Working Principle

When an electrical current is applied, the S29AL008J70BAI010 stores and accesses the data using floating gate transistors or FGs (also called Flash memory). FG memory is non-volatile and is capable of being programmed at any time, meaning it will retain its program regardless of power sources. The FG can be programmed to store data as electrically charged electrons in the channel between the source and the drain. In order to change the stored data in the FG, the Fowler-Nordheim tunneling process is used to program the memory. This process is the work of transferring electrons from the channel of the FG to the FG isolation channel.

To read the data stored in the floating gate, the channel of the FG is applied with voltage, resulting in electron shift. After this, the electron shift is read-out as data and converted into digital data. During read-out, the voltage is applied to the drain and the source of the FG. The voltage varies depending on the amount of electrons stored in the FG. On the other hand, in order to program the data in the FG, a Fowler-Nordheim tunneling process is used. This process works by applying a higher voltage at the drain and the source of the FG to draw the electrons from the source and to the drain.

Conclusion

The S29AL008J70BAI010 is a highly reliable and efficient 8 MB memory product. It offers a wide range of densities, fast read and program times, and a wide operating temperature range. With its small size and low power consumption, it is ideal for a wide range of memory applications, communications, automotive, aerospace, medical, industrial and consumer applications.

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