S29AL008J70BFI013 Allicdata Electronics
Allicdata Part #:

1274-1172-2-ND

Manufacturer Part#:

S29AL008J70BFI013

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 8M PARALLEL 48FBGA
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para...
DataSheet: S29AL008J70BFI013 datasheetS29AL008J70BFI013 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: AL-J
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)
Description

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S29AL008J70BFI013 Memory

The S29AL008J70BFI013 is a high-speed static random access memory (SRAM) device that is designed to offer an efficient solution for a wide range of applications. This device is specifically designed to meet the increasing demands of various devices such as automotive systems, consumer electronics, communications systems and military applications.

Applications

The S29AL008J70BFI013 memory device offers many benefits such as a low power consumption, a fast access speed, a long data retention time and a wide operating voltage. It is an ideal choice for a range of data and application-specific applications. The device can be used in automotive, consumer electronics, medical, industrial and military applications.

In automotive applications, the S29AL008J70BFI013 memory can be used for data logs, data storage and system performance monitoring. In consumer electronics applications, the device can be used in a range of products such as computers, game consoles, digital cameras, personal digital assistants (PDAs) and cellphone. It can also be used in medical, industrial and military applications for data logging, data storage and real-time control.

Working Principle

The S29AL008J70BFI013 memory device operates in two modes: static and dynamic. In static mode, the SRAM is used as a static storage device. In this mode, the memory device remains active even when power is removed. This ensures data integrity and availability.

In dynamic mode, the SRAM is used as a dynamic random access memory (DRAM). In this mode, the device needs an external control signal such as an address bus, data bus, address/data bus, write-enable signal and clock signal to read and write data. In this mode, the memory device is powered on and off and can run at speeds that are much faster than static mode.

The S29AL008J70BFI013 memory device is designed to support multiple operating voltages, allowing it to be used in a range of applications. The device is available in a 48-pin TSOP and is provided with a wide operating voltage range of 0.9V to 1.5V.

Conclusion

The S29AL008J70BFI013 memory device is an advanced SRAM that provides an ideal solution for different applications, including automotive, consumer electronics, medical, industrial and military applications. It features low power consumption, fast access speed, long data retention time and wide operating voltage range, making it an attractive choice for power-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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