S29AS016J70BFI040

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S29AS016J70BFI040 memory is a type of Static Random Access Memory (SRAM) that is used in a wide range of applications. It is designed to meet the needs of high-speed, high-density, and low-power applications. The device is a 16Mb SRAM organized as 8-bit words and is available in a variety of packages. The device is suitable for applications such as code storage, data caches, boot code, and memory buffers.

The S29AS016J70BFI040 operates with dual power supply, making it ideal for cost- and energy-efficient controlled systems. The device is capable of operating over a wide voltage range of 2.5v-3.6v. It also has an operating temperature range of -40℃ to +85℃.The device has an addressable access time of 70ns, making it ideal for high speed applications. It also has a standby current of 7µA and active current of 7mA when operating at 2.5-3.6v.

The S29AS016J70BFI040 utilizes an asynchronous burst architecture for memory operations to ensure a faster data access. It also has an error detection and correction (EDC) feature, which can detect and correct errors in data during a read operation. Additionally, the device supports multiplexed address and data bus, which reduces the number of signals used to read and write data.

The S29AS016J70BFI040 SRAM is a reliable memory device suitable for a wide range of applications, such as code storage, data caches, boot code, and memory buffers. It is capable of providing fast access times and has a wide voltage and temperature range. The device also has an EDC feature to detect and correct errors in data before they cause a system malfunction. As such, the device is a reliable and efficient solution for high-density memory requirements.

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