S29AS008J70BFI030

Series:	AS-J
Packaging:	Tray
Part Status:	Last Time Buy
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	1.65 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-VFBGA
Supplier Device Package:	48-FBGA (8.15x6.15)

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S29AS008J70BFI030 Memory Application Field and Working PrincipleS29AS008J70BFI030 are types of non-volatile memory that combine the features of high-speed NOR flash memory arrays and low-power EEPROM cell technology. They have a low pin-count of 8, and optimal read performance of 70ns with a maximum write time of 70ns. These are the features that make S29AS008J70BFI030 a cost-effective solution for embedded applications and mass storage system.Application FieldS29AS008J70BFI030 are suitable for a broad range of applications, including automotive, industrial, medical, and consumer electronics.In automotive, these memories are widely used for automotive systems such as airbags, power steering systems, and air conditioners. They provide high integration and low power dissipation. In addition, these memories are used for the storage of navigation and other related data. S29AS008J70BFI030 are also used in a variety of industrial applications. They are used for the efficient storage of data in a variety of products, including power meters, ticket machines, and vending machines.In medical applications, the high speed read performance coupled with the low power consumption of S29AS008J70BFI030 makes them an ideal choice for implantable devices and other medical equipment.In consumer electronics, S29AS008J70BFI030 are used for white goods, TV, and other home entertainment systems. Working Principle S29AS008J70BFI030 are non-volatile memories that use flash memory and EEPROM cell technology. They are the combination of both technologies and they provide a unique and cost-effective non-volatile memory solution. These memories use two separate processes for the read and write operations; the first one being the write process, and the second one being the read process.The write process involves the programming of the memory cells by applying voltage pulses and current supply onto the memory cells. The read process involves the verification of the programmed memory cells and can be done by applying either a differential voltage, or a current to the memory cells. The advantage of the S29AS008J70BFI030 is that they can provide a fast read time with low power consumption, and they also have a very low pin-count. This makes them an ideal choice for embedded applications. In addition, the S29AS008J70BFI030 are also built with SLC (single-level cell) technology, which is more reliable and resilient than MLC (multi-level cell) technology. This ensures that the memory cells are well protected from external effects and other unforeseen errors. ConclusionIn conclusion, S29AS008J70BFI030 are a reliable and cost-effective solution for embedded applications and mass storage systems. They have a low pin-count of 8, optimal read performance of 70ns with a maximum write time of 70ns and they are built with SLC (single-level cell) technology, which is more reliable and resilient than MLC (multi-level cell) technology. They can provide a fast read time with low power consumption and are suitable for a broad range of applications, including automotive, industrial, medical and consumer electronics.

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