Allicdata Part #: | S29AS008J70BFI033-ND |
Manufacturer Part#: |
S29AS008J70BFI033 |
Price: | $ 0.74 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 8M PARALLEL 48FBGA |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para... |
DataSheet: | S29AS008J70BFI033 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.67441 |
Series: | AS-J |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8, 512K x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-FBGA (8.15x6.15) |
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S29AS008J70BFI033 Memory: Applications and Working Principles
The S29AS008J70BFI033 is a type of Memory device. It is a MLC (Multi-Level Cell) NAND Flash device that is commonly used in a variety of applications. The device is built on an 8-bit architecture and has a 1Gbit capacity with 2K pages.
The S29AS008J70BFI033 is commonly used in embedded applications where a stable, high-capacity storage solution is needed. Its two-page technology allows for speeds of up to 160MHz with an industry-standard SDR (Single Data Rate) interface. Its small size and excellent power efficiency make it a popular choice for embedded applications in consumer-grade electronic devices.
The S29AS008J70BFI033 is designed to operate at a temperature range of -40 to +85°C and can be used in applications that could benefit from an improved thermals profile. The device is fully compliant with the JEDEC standards for Flash storage devices and uses 3rd-party software Keds to facilitate the management of the internal data.
In terms of data security, the S29AS008J70BFI033 is equipped with state-of-the-art internal ECC (Error Correction Code) and XOR technologies, as well as having been tested for up to 100K shock cycles, 30K vibration cycles and 10K Read/Write operations. These features ensure that the device is extremely reliable and secure for its intended applications.
The S29AS008J70BFI033 memory device works on the basis of the NAND Flash memory architecture, which is composed of two logic levels. The first is the Memory Array that stores data and the second is the Control logic that is responsible for the writing and erasing of data in the device. The device requires the use of 4V to program and erase, and uses a special flash driver to communicate with the host. The device is programmed by selectively sending a low voltage to one or more of the Memory Array’s cells to write data.
The S29AS008J70BFI033 also has an internal MCU (Microcontroller Unit) to facilitate the management and communication between the host and the Memory Array. The MCU also handles the programming of the device, which is done by sending data frames with specific command codes to the device using the flash driver.
The S29AS008J70BFI033 is a reliable and cost-effective solution for a variety of applications such as gaming, multimedia, industrial and embedded applications. The device is built to withstand extreme environments and provides a high degree of data security and reliability. The device is also very compact and its low power consumption makes it a great choice for any application that requires an efficient storage solution.
The specific data is subject to PDF, and the above content is for reference
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