S29GL032N90DFI020 Allicdata Electronics
Allicdata Part #:

428-4350-ND

Manufacturer Part#:

S29GL032N90DFI020

Price: $ 1.48
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29GL032N90DFI020 datasheetS29GL032N90DFI020 Datasheet/PDF
Quantity: 5516
1 +: $ 1.48000
10 +: $ 1.43560
100 +: $ 1.40600
1000 +: $ 1.37640
10000 +: $ 1.33200
Stock 5516Can Ship Immediately
$ 1.48
Specifications
Series: GL-N
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (9x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology has greatly advanced throughout the years, and a perfect example of this would be the S29GL032N90DFI020. This device is a single-voltage Flash memory, developed using a process that supports the requirements for higher device densities. It provides maximum densities of 32Mb and 128 Mb of Flash memory.

S29GL032N90DFI020 memory is a non-volatile memory used for storing data without the need for a power supply. It provides low-density NOR Flash technology, allowing execution of code from the Flash memory. It has a wide range of applications, including microcontroller and processor-based systems, PC cards, PDAs, digital cameras, MP3 audio players, and digital set-top boxes.

The S29GL032N90DFI020 features two separate banks with thirty-two data byte lines, thirty-two byte control lines, and twenty-four address lines. The Flash memories are divided into two separate banks with thirty-two byte lines each. The S29GL032N90DFI020 can be programmed and erased in block sizes of 32 words by 2048 bits.

The working principle of S29GL032N90DFI020 is a slightly complex process. When a voltage is applied to it, electrons are transferred from one layer of the device to another and are then stored in the memory cells. Once the memory cells have been programmed, the electrons will remain in the cells until a sufficient voltage is applied to the erase gates of the particular memory cells.

S29GL032N90DFI020 also offers an integrated fail-safe write circuit. This circuit ensures that data written to the device is correctly stored even in the event of an unexpected power loss. This is an important feature as data loss is a common problem with many types of memory.

The S29GL032N90DFI020 is a highly advanced device, and it is clear to see why it is so popular in many different applications. Its features are suitable for a wide range of applications, and its reliability and high densities make it an excellent choice for projects.

The specific data is subject to PDF, and the above content is for reference

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