| Allicdata Part #: | S29GL256P90FFSS90-ND |
| Manufacturer Part#: |
S29GL256P90FFSS90 |
| Price: | $ 5.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 256M PARALLEL 64BGA |
| More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 90... |
| DataSheet: | S29GL256P90FFSS90 Datasheet/PDF |
| Quantity: | 1000 |
| 136 +: | $ 4.53915 |
| Series: | GL-P |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 256Mb (32M x 8) |
| Write Cycle Time - Word, Page: | 90ns |
| Access Time: | 90ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 64-LBGA |
| Supplier Device Package: | 64-Fortified BGA (13x11) |
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S29GL256P90FFSS90 is a type of Memory device, specifically a nonvolatile embedded Flash Memory. It is a product of memory company Spansion. Its applications are mainly in Aerospace, Automotive, Computing, Networking, Wireless and Industrial markets. The device features fast access times and a low-power read operation. It is available in a variety of packages: WSOIC, x36 TSOP, x32 SOIC, x48 TSSOP, x48 LFBGA and x48 UFBGA.
The device offers an internal page buffer that allows a full page of data to be read/written with only one access to the Flash chip. The device also offers an on-chip Ecc, allowing for a high data integrity. Other features include toggle 1.2 interface, support for small-sector erase, and type 1 advanced block data protection.
The device offers various operating voltages, including 1.7V for standard read, 1.8V for fast read, and 2.7-3.6V for standard operations and advanced read/write operations. The maximum operating temperature range is from -40°C to +85°C.
The device offers an Industry-leading erase and program time. The fast erase and program time allows for fast system-level programming. The device can be written in single bytes, words, sectors or in full pages. A Read-Modify-Write operation can also be done for faster programming.
The working principle of the device is based on its Flash Memory. Flash Memory is a type of nonvolatile memory that can be electrically erased and re-programmed. The memory is made from a series of floating-gate transistors, or cells, which are connected together. Each cell can store up to one bit of data. Operating voltages applied to the cells can be used to change the data stored in them.
The S29GL256P90FFSS90 device uses a split-gate transistor array. A control gate and a floating gate are designed on each cell, allowing for more efficient erasing and programming. The device also implements an on-chip ECC, allowing for higher data integrity. The device is available in multiple packages and offers an array of features suitable for applications such as aerospace, automotive and industrial.
The specific data is subject to PDF, and the above content is for reference
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S29GL256P90FFSS90 Datasheet/PDF