| Allicdata Part #: | S29GL256P10FFIS12-ND |
| Manufacturer Part#: |
S29GL256P10FFIS12 |
| Price: | $ 4.84 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 256M PARALLEL 64BGA |
| More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 10... |
| DataSheet: | S29GL256P10FFIS12 Datasheet/PDF |
| Quantity: | 1000 |
| 400 +: | $ 4.40152 |
| Series: | GL-P |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 256Mb (32M x 8) |
| Write Cycle Time - Word, Page: | 100ns |
| Access Time: | 100ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 64-LBGA |
| Supplier Device Package: | 64-Fortified BGA (13x11) |
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S29GL256P10FFIS12 is a single-power Flash memory used in embedded system applications. It is an economical alternative to other large-capacity memories, and provides excellent power management capabilities and wide temperature range operation.
It is part of the S29GL256P family of high performance, low-cost Flash memories. It is available in a variety of densities and offers sector architectures that meet the specific needs of embedded system applications. The product supports dual I/O features and asynchronous burst access for quick read latency.
Application Field
S29GL256P10FFIS12 is ideal for applications where code storage is critical. As code storage has to be safe and secure, it is designed to store code in-application programmable Flash memories. It is widely used in GPS, personal media players, automotive applications, personal computers, phones, control stations and other embedded system applications. The product offers sector architectures for specific needs and supports dual I/O features and asynchronous burst access.
Working Principle
The S29GL256P10FFIS12 is a single-pumped Flash memory based on NOR flash technology. The memory architecture is optimised for programs that require large amounts of code storage, including complex applications such as operating systems and advanced graphics. It uses programmable read-only memory (PROM) cells as memory cells to store data. This type of memory is not volatile, meaning that data can be stored permanently, even if the power is disconnected.The memory is organised in blocks and pages and a sector erase operation is required in order to flush the content of a flash memory.
The memory works in two modes, which are asynchronous or synchronous. The asynchronous mode is used to read the flash memory in order to access the data stored in it. It is a faster mode compared to synchronous mode, as it uses latch-up mechanism and internal clock to ensure fast data-read time. The synchronous mode is used for data write operations. Data can be written to the flash memory in 256-byte chunks, or a combination of single bytes and chunks.
The flash memory also supports user-controlled power down and self-timed erase operations. The user-controlled power down mode can be used to reduce power consumption and prevent code corruption in the event of a power outage. The self-timed erase operation is used to clear up a sector of the flash memory in order to refresh it.
The S29GL256P10FFIS12 is an economical and reliable Flash memory that provides excellent power management capabilities and wide temperature range operation, making it a viable choice for embedded system applications.
The specific data is subject to PDF, and the above content is for reference
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S29GL256P10FFIS12 Datasheet/PDF