S29GL256N90TFAR10

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S29GL256N90TFAR10 is part of the flash memory family of products. It is a low-power, high-density, 3-volt Flash memory based on an advanced split-gate cell design. It is manufactured using a 90 nm process technology and contains 256 Mbit of memory. The S29GL256N90TFAR10 Flash memory provides excellent read and programming performance and wide operating voltage range. It operates from 1.8V to 3.0V and provides reliable, consistent operation from 4.2V to 12V. This makes it ideal for applications in automotive, consumer and industrial markets.

The S29GL256N90TFAR10 supports 8-bit and 16-bit data bus widths, making it ideal for interface to 8-bit microcontrollers such as the Atmel AVR, FreescaleHC(9)08, and HC11. It is also compatible with 16-bit microcontrollers such as FreescaleHC(9)12, and HC16. Moreover, it can be used in conjunction with external memory support devices such as SRAM, EPROM, EEPROM and FLASH memory.

The S29GL256N90TFAR10 features a very low active current and a wide operating voltage range of 1.8V to 3.0V. The device incorporates temperature compensated self-timed write algorithms that allow a reliable program and memory operation to achieve excellent levels of endurance and data retention over life. The Flash memory also offers several sector protection schemes, as well as uniform and flexible block programming.

The S29GL256N90TFAR10 is designed for use in embedded systems that require non-volatile memory to store and execute code. The device can be used to store BIOS code, microcode, device configuration, parameter and data storage, as well as code and data. The S29GL256N90TFAR10 Flash memory incorporates a Stack algorithm that minimizes code space by sharing the code and data information among multiple functions.

The S29GL256N90TFAR10 flash memory features a single level cell (SLC) architecture. The SLC architecture ensures higher speed and endurance in comparison to its Multi Level Cell (MLC) counterparts. The S29GL256N90TFAR10 flash memory operates in three different modes: read mode, program mode and erase mode.

In read mode, all operations are read/write. Address and control signals, as well as data, are supplied externally. Data can be read from any one of the 256 Mbits of memory organized into divided sectors. In program mode, data, often coming from a non-volatile memory, is written to the memory. The data can be written in either page write or sector erase code mode. In erase mode, the entire Flash memory can be erased either in sector or in chip level. The single bit per cell architecture of the S29GL256N90TFAR10 flash memory provides protection against accidental instructions, power failures and code corruptions, ensuring reliability and data integrity.

The S29GL256N90TFAR10 flash memory continues to be a popular choice for applications that require reliable data storage and execution. With its versatile and high-performance design, it is suitable for a variety of applications in both embedded systems and consumer electronics, automotive and industrial markets.

The specific data is subject to PDF, and the above content is for reference