S29GL128P90FFSS03

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S29GL128P90FFSS03 is a type of non-volatile Flash memory, a type of \'solid-state\' memory. It is organized as 128Mbit or 16MByte or 2M x 8 bits, organized as 8 banks. Its manufactuer is Spansion. It features a fast whole-chip erase time of 5.0 seconds or less and the high-speed write feature which allows the entire array to be written in 8 seconds or less with 2.5 volt supply. The high-speed write feature enables 1, 4 and 16-bit commonly used data format/operations and supports 8-bit and 16-bit processors without additional software, allowing faster program execution. It also offers a reduced-voltage design which allows operation at lower core supply voltage, while still meeting the 40-pin interface specification.

The S29GL128P90FFSS03 is a low-power, flexible-access asynchronous Flash memory device. It is available in 4KB, 8KB, 16KB and 32KB size sectors, with two lock bits per sector, providing a high level of protection against inadvertent device programming. It also contains 512-byte per sector programmable EEPROM mimicking nvSRAM™ with a standby mode and typical write time of less than 220msec. The DYB (Data# polling) feature ensures that a Valid program/erase cycle is complete prior to data being written to the device.

S29GL128P90FFSS03 is most notably used for embedded databases and applications requiring reprogrammable non-volatile storage, non-volatile firmware disks and other persistent data storage applications. It is suitable for program code and utility data storage, as this type of memory is used in personal computers and workstations. It is also used in specialized appliances, embedded application controllers, automation control systems and machine-to-machine applications.

Working principle: S29GL128P90FFSS03 uses a process called Fowler–Nordheim tunneling to program and erase the memory array. This process utilizes a high voltage between the source and the drain of a transistor region in the memory array. The transistor used for tunneling is known as the control gate and is connected to a ground voltage source. When a high voltage is applied, it causes a current to flow from the source to the drain. This current then breaks the thin layer of insulation between the two regions and moves electrons across the junction.

During programming, electrons are injected into the floating gate of the transistor, thus increasing the charge on the gate and turning the transistor on. During the erase operation, electrons are sucked away from the floating gate, lowering the charge and turning the transistor off. Subsequently, the transistor will always remain in either the ON or OFF state, depending on the program or erase operation that occurred on it. In summary, the programming and erasing of the S29GL128P90FFSS03 memory cells involves altering the charge of the floating gate, which is controlled by the application of programming or erasure voltage.

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