| Allicdata Part #: | S29GL064N90FFIS12-ND |
| Manufacturer Part#: |
S29GL064N90FFIS12 |
| Price: | $ 1.23 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 64M PARALLEL 64BGA |
| More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
| DataSheet: | S29GL064N90FFIS12 Datasheet/PDF |
| Quantity: | 1000 |
| 400 +: | $ 1.10762 |
| Series: | GL-N |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 64Mb (8M x 8, 4M x 16) |
| Write Cycle Time - Word, Page: | 90ns |
| Access Time: | 90ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 64-LBGA |
| Supplier Device Package: | 64-Fortified BGA (13x11) |
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Memory: S29GL064N90FFIS12 Application Field and Working Principle
The S29GL064N90FFIS12 is a 64 megabit (Mb) CMOS single voltage Flash memory device. It belongs to Flash memory type, which is a non-volatile memory that can be erased and reprogrammed one page at a time. It is produced by Spansion and has been the leading manufacturer of Flash memory chips since the early 2000s.
In particular, the S29GL064N90FFIS12 provides an array of 8,448 x 64/8,128 x 128 bytes of user-definable electrically erasable programmable read-only memory (EEPROM) organized as 8 MB. The memory device is composed of two 64 Mx 8 bit CMOS Flash devices, each containing its own erase, programming, and read-out circuitry.
The S29GL064N90FFIS12 is widely used in embedded applications. It typically operates at speeds between 66 MHz and 200 MHz and provides data throughputs between 18 and 54 Mbps, depending on interface configurations. Moreover, the device contains several system level protection features, such as internal chip select control, address masking for page addressing, and hardware reset pin for safe self-programming.
The working principle of the S29GL064N90FFIS12 is pretty straightforward. It operates on the simple principle of storing data in the form of electrons. When the device is first powered on, the electrons are distributed evenly across the chip, representing no data. To store data, electrons are moved to the appropriate addresses, and the data is erased when electrons are removed from the memory cells.
In terms of the programming process, this is accomplished by applying high voltage pulses to the programming pins, which allow electrons to move through the junction layer of the device. This causes a change in the underlying material, resulting in a bit of data being stored. When the voltage is removed, the electrons will remain in place, and the data will remain stored until the next programming cycle.
The S29GL064N90FFIS12 Flash memory device is designed to provide reliable non-volatile memory that can be used in a variety of applications. Its long data retention characteristics, extended temperature range, and small form factor make it an ideal choice for embedded systems requiring data storage. Moreover, its low power consumption and fast programming speeds make it suitable for various consumer electronics applications.
In conclusion, the S29GL064N90FFIS12 is a reliable and cost-effective Flash memory device ideal for a wide array of applications. Its versatility, extended temperature range, and power efficiency are all key factors for its success in the embedded systems market. The device offers the superior data retention and fast programming speed required by today’s embedded systems, making it a top choice for memory requirements.
The specific data is subject to PDF, and the above content is for reference
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S29GL064N90FFIS12 Datasheet/PDF