Allicdata Part #: | 1274-1029-ND |
Manufacturer Part#: |
S29GL128S90TFI010 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 90... |
DataSheet: | S29GL128S90TFI010 Datasheet/PDF |
Quantity: | 1661 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (8M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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S29GL128S90TFI010 is a type of memory, which is widely used in computing, data storage and other applications. It is one of the leading Flash memories in the market. This memory is an all-purpose 128-mega bit Flash memory with 90 nanosecond access time, which makes it a powerful choice for embedded system designers, who want a stable and reliable memory solution.
Compared to other Flash-based memories, S29GL128S90TFI010 offers superior performance and superior design flexibility. It is designed with an advanced nonlinear self-timed write-read architecture, which eliminates the need for skew adjustment while the write operation is executing. This makes the device more efficient and helps reduce the power consumption.
The memory also features superior reliability and is compliant to the JEDEC-20 specification. It is ideal for embedded applications and can support a wide range of applications, including system-on-chip designs, automotive, imaging and data storage.
In terms of the working principle, the S29GL128S90TFI010 uses a split-gate structure for programming. This splits the memory cell into two separate gates. The first gate is the cell gate, where data is written and the second gate is the control gate, where the data is erased. Writing and erasing can be performed simultaneously in this memory type, reducing the write and erase time.
The device offers a multiple access scheme which allows data to be read and written at the same time. The split-gate structure also reduces cell size, resulting in a smaller memory array. This makes it more efficient and helps reduce power usage.
The S29GL128S90TFI010 offers a wide operating temperature range and excellent data retention. In addition, it offers superior data integrity and protects against any kind of external interference. This makes it a reliable and secure memory solution for embedded applications.
In summary, the S29GL128S90TFI010 is an ideal choice for embedded applications due to its superior performance, superior reliability and superior flexibility. Its split-gate design helps reduce power usage, and its multiple access scheme makes it a powerful choice for system designers who need a stable and reliable memory solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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