S29GL256P90FFIR13

Series:	GL-P
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (32M x 8)
Write Cycle Time - Word, Page:	90ns
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LBGA
Supplier Device Package:	64-Fortified BGA (13x11)

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S29GL256P90FFIR13 is a 8-Megabit, single voltage Flash memory device. It is designed to operate from a 1.8 V cell phone supply or from a 3.3 V desktop or communications supply. The S29GL256P90FFIR13 contains 344K words of 32 bits each with spare bits. The words are organized in uniform memory sectors that are organized in banks. All addresses are byte addresses.The S29GL256P90FFIR13 is a high-performance, single voltage Flash Memory device. It is designed to operate from both 1.8 V and 3.3 V supplies. S29GL256P90FFIR13 is a 3.3V only device. It is ideal for applications requiring 11-bit or 12-bit program read Instructions.The device features a high degree of parameter flexibility and a full array of on-chip peripheral functions. On-chip features such as sector protection, block locking, ECC support and secure erase/program functions make it suitable for applications such as online secure storage, programmable microcontrollers, memory cards and other embedded systems. The S29GL256P90FFIR13 Flash memory device is a very popular choice for a wide range of applications. It is designed for use in consumer electronics, automotive, industrial and telecommunications applications. The device is well-suited for embedded systems and consumer electronics applications such as smart cards, controllers, communications products and automotive systems. The S29GL256P90FFIR13 Flash memory device has various features that give it flexibility and improved performance. The device features an advanced single voltage architecture and is suitable for low power applications. It also offers fast read and write access times enabled by its page buffer and page burst architecture. The S29GL256P90FFIR13 Flash memory device provides both density and cost benefits. The device can be used to replace more expensive components and is ideal for cost-sensitive applications. It also offers an enhanced functionality over other Flash devices, such as read-while-write capability, extended temperature range and enhanced endurance. The S29GL256P90FFIR13 Flash memory device offers a combination of features that provide flexibility and improved convenience for system designers. The device provides secure erase/program functions, flexible programming support and sector protection. It also supports security functions such as read password protection and auto timed self-erase. The working principle of the S29GL256P90FFIR13 Flash memory device revolves around the concept of programmed bits. The device stores a program using a combination of bits which either represent a 0 or a 1. The device then uses the combination of these bits to encode the necessary information. A programmed bit will have either a 0 or a 1 depending on the data written to the device. This corresponds to either a voltage high or low, allowing the data to be read and written to the device. The S29GL256P90FFIR13 Flash memory device offers system designers the flexibility and improved performance they need for their applications. The device\'s low power consumption, reliability and high performance make it suitable for a range of applications. The device has the added advantage of being able to store multiple program instructions, allowing for more efficient storage and faster access times.

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