S29GL256S10DHV010 Allicdata Electronics
Allicdata Part #:

S29GL256S10DHV010-ND

Manufacturer Part#:

S29GL256S10DHV010

Price: $ 4.21
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 256M PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1...
DataSheet: S29GL256S10DHV010 datasheetS29GL256S10DHV010 Datasheet/PDF
Quantity: 1000
260 +: $ 3.82602
Stock 1000Can Ship Immediately
$ 4.21
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (9x9)
Description

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S29GL256S10DHV010 Memory Application Field and Working Principle

The S29GL256S10DHV010 is a high-performance NOR Flash memory that is widely used for various applications as a boot and code storage device. The combination of its industry-leading performance, low-power consumption, low voltage solutions, and cost-effectiveness makes it ideal for many embedded applications. This article discusses the applications and working principle of the S29GL256S10DHV010 memory.

Applications of the S29GL256S10DHV010 Memory

The S29GL256S10DHV010 is ideal for use in embedded systems requiring NOR Flash memory as it provides an ideal combination of performance, low power consumption, cost effectiveness and flexibility. The device can operate at up to 6.0V, so it is suitable for battery operated applications. It provides 32-bit data bus for high speed data transfers and supports JEDEC-standard pinouts. In addition, its built-in Error Correction Code ensures high-reliability data storage. As such, the S29GL256S10DHV010 is often used in embedded systems, including cellular phones, digital cameras, POS terminals, notebooks, industrial controls, automotive systems and more.

Working Principle of the S29GL256S10DHV010 Memory

The S29GL256S10DHV010 memory is a NOR-type Flash memory, which means that it is a nonvolatile, low-latency memory with a low bus-to-bus latency. It uses a parallel/serial architecture that makes it suitable for various applications. For simplicity, the S29GL256S10DHV010 memory is divided into two major parts: the volatile work area and the non-volatile storage area. The volatile work area is used for temporary data storage and allows multiple accesses of the non-volatile storage area.

The S29GL256S10DHV010 memory is made up of an array of transistors and has two separated bus systems to manage data access. When a memory access is initiated, a set of address signals is connected to the array, and the corresponding storage location is accessed. The system will then read the data from the storage location as output. This process is repeated for each access. The S29GL256S10DHV010 also includes a system of Error Correction Code (ECC) that improves the reliability of data and helps ensure that the data is not corrupted while in storage.

Conclusion

The S29GL256S10DHV010 is a high-end NOR-type Flash memory solution that provides a combination of high performance, low-power consumption, and cost-effectiveness. It is suitable for many embedded applications, due to its support for JEDEC-standard pinouts, wide operating voltage, and built-in ECC. Furthermore, its parallel / serial architecture makes it an ideal solution for applications that require rapid data transfer. As such, the S29GL256S10DHV010 is a popular choice for applications that require reliable, low-latency NOR flash memory.

The specific data is subject to PDF, and the above content is for reference

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