S29JL032J60TFI223 Allicdata Electronics
Allicdata Part #:

S29JL032J60TFI223-ND

Manufacturer Part#:

S29JL032J60TFI223

Price: $ 1.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29JL032J60TFI223 datasheetS29JL032J60TFI223 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.75369
Stock 1000Can Ship Immediately
$ 1.93
Specifications
Series: JL-J
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP (18.4x12)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S29JL032J60TFI223 is a static random access memory (SRAM), which is designed to offer improved performance and flexibility. It combines two key features of SRAM: Non-volatile Memory and Enhanced Memory. It is available in two densities, 0.32Mb (4Mb bit) and 0.60Mb (8MB bit).

Non-Volatile Memory (NVM) is a type of memory that does not lose its content even when power is removed. SRAM provides fast read/write access compared to Flash memory or other NVM technologies, but generally has far lower densities. The addition of NVM to SRAM improves performance and extends the life of the device.

Enhanced Memory (EM) is an improved version of static RAM (SRAM) used for data storage. It provides some enhancements over standard SRAM such as higher speed, greater endurance and improved reliability. The S29JL032J60TFI223 is enhanced to take advantage of its Non-Volatile Memory features without sacrificing the speed and reliability of standard SRAM.

The S29JL032J60TFI223 offers several features that make it suitable for industrial and consumer applications. It has a very low power consumption and can reliably store data at temperatures of -40°C to +85°C. It also offers a three-way selectable I/O scheme and a Write-Protect feature to help prevent accidental data loss.

The working principle of the S29JL032J60TFI223 is based on the concept of non-volatile memory, which stores data even when the power is off. To write data to the memory, the data is first read from an external source and then written to the memory cell array. The data is then stored until a subsequent operation is required. When a subsequent operation is needed, the memory is then read and the appropriate data is written to the memory cell array. If the new data is different from the stored data, the stored data will be replaced with the new data.

The S29JL032J60TFI223 can be used in a variety of applications including automotive, industrial, and consumer applications. Its low power consumption and high storage capacity make it ideal for these applications. Additionally, its wide operating temperature range makes it suitable for use in extreme environments. Its Enhanced Memory features make it well-suited for embedded systems, where data storage requirements can vary from time to time.

In conclusion, the S29JL032J60TFI223 is an ideal SRAM for a wide range of applications. It is designed to offer improved performance and flexibility due to its Non-Volatile Memory and Enhanced Memory features. Its low power consumption and wide operating temperature range make it suitable for a variety of applications. It is a reliable, high-performance memory solution that can be used in automotive, industrial, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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