S29JL064J55TFI000

Series:	JL-J
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	64Mb (8M x 8, 4M x 16)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP (18.4x12)

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MemoryThe S29JL064J55TFI000 is a type of non-volatile memory made by Samsung Microelectronics and used in various data processing systems. It is a 64-megabit, 8-bit wide Flash memory device, divided into 8-megabyte blocks, with byte-level access granularity and a 5V write voltage. It is packaged in a 9x9mm Ball Grid Array (BGA) package with 300 pin contacts.The S29JL064J55TFI000 uses a specific design to optimize performance and long-term data retention. It features a new advanced 64megabit dies, with four parallel 2- megabyte components, and a single 8-megabyte component. The device also has page and burst mode operation, resulting in high-speed cycle times and reduced power consumption. This makes the S29JL064J55TFI000 memory an ideal choice for applications requiring large amounts of non-volatile, low-power memory, such as embedded systems and digital audio players.The S29JL064J55TFI000 memory uses floating gate transistors as the core technology to store and retrieve data in high performance applications. A floating gate transistor acts as a tiny memory cell. It is able to store more than two discrete bits of information, which allows multi-level programming and higher memory densities. Floating gate technology provides a higher level of data retention, as the data in the cells remain intact, even without power. This means that the data stored in the chip remains intact even if there is a power failure.The S29JL064J55TFI000 memory is able to deliver both high speeds and low power consumption in applications requiring large storage and data retention. The device is also rugged and reliable, as it employs advanced design techniques to assure long-term uninterrupted operation. The device is resistant to environmental conditions, including extreme temperatures, electromagnetic fields and humidity.In addition, the S29JL064J55TFI000 device supports a variety of applications, such as embedded systems and digital audio players. The device also has an integrated extended error protection mechanism, which corrects single bit errors during read operations. This results in more reliable and accurate data storage and retrieval in challenging environments.In conclusion, the S29JL064J55TFI000 is a high-performance non-volatile memory that is ideal for applications requiring large amounts of memory and data retention. It has low power consumption, as well as high speed, reliable and robust operation. Its advanced design techniques make it extremely durable, offering outstanding protection against environmental conditions and extended error correction. Its floating gate transistor technology also ensures more reliable data storage and retrieval.

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