S29JL032J70TFI220 Allicdata Electronics
Allicdata Part #:

S29JL032J70TFI220-ND

Manufacturer Part#:

S29JL032J70TFI220

Price: $ 2.43
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29JL032J70TFI220 datasheetS29JL032J70TFI220 Datasheet/PDF
Quantity: 1000
1 +: $ 2.43000
10 +: $ 2.35710
100 +: $ 2.30850
1000 +: $ 2.25990
10000 +: $ 2.18700
Stock 1000Can Ship Immediately
$ 2.43
Specifications
Series: JL-J
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S29JL032J70TFI220 is a type of semiconductor memory, which can be broadly categorized as non-volatile. Non-volatile memory remains intact even if power is removed or interrupted. It is important for data storage, since powering down computers and other devices without first saving information can result in loss of data.

The S29JL032J70TFI220 memory consists of 32 Megabit cells. In a 32 Megabit configuration, eight data words consisting of four bits each can be stored per cell. Data is sent to the cell via an upper bus, distributed to eight data lines. An eight line control bus is used to control write, read and erase operations. Data is retrieved from the cell via an eight line output bus.

The S29JL032J70TFI220 memory is ideal for applications that require the storage of large amounts of information. Examples include data storage for computers and other digital devices. The application of S29JL032J70TFI220 memory extends beyond data storage as well. It can also be used for computing and communication tasks, as well as for long-term storage.

The working principle of S29JL032J70TFI220 memory is based on the principle of the programmable read-only memory (PROM). PROM is a type of non-volatile memory that can be programmed to store data. The contents of PROM can be programmed by applying an electrical current to the memory cell and then programmed with a voltage pulse of specific duration and intensity. A logic high signal is needed on the control bus to begin programming. Once it is programmed, the data stored in the memory cell is retained even if the power is removed.

In the case of S29JL032J70TFI220, write and erase operations are controlled through the eight line control bus. A low signal is sent to a single line to select the memory cell to be written to or erased. After a cell is selected, data is written or erased in synchrony with a rising edge of the control signal. Once data is written or erased, the read operation is started by sending a logic low signal on the specific line of the control bus.

S29JL032J70TFI220 memory is widely used for non-volatile data storage. It can also be used for computing and communication tasks, as well as for long-term storage. It is an ideal solution for applications that require large amounts of data to be stored reliably. It is also important to note that the memory cell is programmed and erased through the control bus and the data stored in the PROM remains intact even when power is removed or interrupted.

The specific data is subject to PDF, and the above content is for reference

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