S29JL032J70TFI020 Allicdata Electronics
Allicdata Part #:

S29JL032J70TFI020-ND

Manufacturer Part#:

S29JL032J70TFI020

Price: $ 2.67
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29JL032J70TFI020 datasheetS29JL032J70TFI020 Datasheet/PDF
Quantity: 1000
1 +: $ 2.67000
10 +: $ 2.58990
100 +: $ 2.53650
1000 +: $ 2.48310
10000 +: $ 2.40300
Stock 1000Can Ship Immediately
$ 2.67
Specifications
Series: JL-J
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S29JL032J70TFI020 is a type of memory product with use in a variety of applications. It is a Flash-based, Low-Volatility Non-Volatile Memory (NVM) device. This type of device utilizes Flash memory technology, allowing it to retain data even when power is removed.

This particular Flash memory device can operate across the various voltage ranges of 1.8v, 2.7v, 3.0v, 3.3v and 5.0v. This wide range of available voltages gives it the ability to serve a variety of applications, from portable electronics to automotive. Due to its ability to store data over a wide voltage range and its low-voltage operation, this type of memory device is often used for data storage requirements such as code storage.

The S29JL032J70TFI020 employs both MLC (Multi-Level Cell) and SLC (Single-Level Cell) technology. MLC technology uses multiple memory levels to store data, while SLC technology stores only one level of data. With this combination of technologies, the device is able to provide an increase in data-density while minimizing power consumption and maintaining high read/write speeds. It also has a write-protection mechanism to avoid data loss during power failure.

The working principle of the S29JL032J70TFI020 is based on Flash memory technology with a non-volatile nature, allowing it to store data even when power is removed. The device has a controller inside that organizes the data storage process. This controller manages the programming and erase cycles, which are performed when the user writes new data or deletes old data. Data is stored in the integrated memory, which is divided into many blocks and pages. Access to each block or page is monitored by an address decoder, which is responsible for mapping the address to the correct block or page.

This type of memory also has error correction capabilities, using an Error Correction Code (ECC) algorithm to ensure data accuracy. This method uses mathematical algorithms to detect and fix any errors that could occur when data is transmitted. This helps to reduce the chance of data corruption and increase data stability.

The S29JL032J70TFI020 memory device is an ideal solution for applications needing a combination of high data-density and low power consumption. In addition, its wide voltage range, error correction capabilities and write-protection mechanism make it an attractive choice for applications requiring reliable data storage. This type of memory product is used in a wide range of applications such as portable electronics, automotive, industrial equipment, medical systems, and many more.

The specific data is subject to PDF, and the above content is for reference

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