S29JL032J70TFI213 Allicdata Electronics
Allicdata Part #:

S29JL032J70TFI213-ND

Manufacturer Part#:

S29JL032J70TFI213

Price: $ 1.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29JL032J70TFI213 datasheetS29JL032J70TFI213 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.75369
Stock 1000Can Ship Immediately
$ 1.93
Specifications
Series: JL-J
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

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The S29JL032J70TFI213 is a kind of memory module that is highly sought after due to its speed and efficiency. The memory module is a type of dynamic random access memory (DRAM), which is a type of memory that stores data as electric charges on a grid of small capacitors. This type of memory is used in many applications, such as computers, mobile phones, and gaming devices. But what are the application fields and working principles behind this module?

The S29JL032J70TFI213 is mainly used for memory applications, such as storing data from computers or other electronic devices. The module is capable of storing up to 4 gigabytes of information, which is enough to store many documents, pictures or videos. The module comes in a compact and lightweight package, which makes it ideal for use in portable electronic devices like laptops or cell phones. Due to its fast read and write speeds, the S29JL032J70TFI213 is also suitable for use in gaming consoles, where quick loading times and smooth graphic transitions are essential.

The working principle behind the S29JL032J70TFI213 is based on the principle of dynamic random access memory (DRAM). The memory module store data as electric charges on a grid of small capacitors. When an electrical signal is transmitted to a particular cell on the grid, an electric charge is held in the capacitor, which is then used to represent a 0 or 1. The data stored in the module is constantly being monitored and refreshed as the charges in the capacitors slowly leak out over time. This is known as \'refresh cycle’, and is necessary in order to ensure that the data stored in the module is maintained accurately and up to date.

The S29JL032J70TFI213 is a highly efficient and reliable memory module for use in a variety of applications. Due to its speed and capacity, it is suitable for use in gaming consoles, laptops and other electronic devices. Its working principle is based on the principle of dynamic random access memory (DRAM), where data is stored as electric charge on a grid of small capacitors. The capacitors are constantly being monitored and refreshed to ensure that the data stored is accurate and up to date.

The specific data is subject to PDF, and the above content is for reference

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