S29JL032J60TFI313 Allicdata Electronics
Allicdata Part #:

S29JL032J60TFI313-ND

Manufacturer Part#:

S29JL032J60TFI313

Price: $ 1.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29JL032J60TFI313 datasheetS29JL032J60TFI313 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.75369
Stock 1000Can Ship Immediately
$ 1.93
Specifications
Series: JL-J
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP (18.4x12)
Description

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Memory

The S29JL032J60TFI313 is a high-density 2M to 32M CMOS Flash memory technology which is both efficient and reliable. It is a multi-bit Flash memory technology, which enables single read and program operations for multiple bits. The S29JL032J60TFI313 can be Flexibly configured to support 512, 1024, 2048 or 4096 byte page size.

The S29JL032J60TFI313 is highly versatile, offering a number of features that maximize performance and economy. The most noteworthy enhancement of this technology is the industry’s lowest current consumption. Additionally, the technology utilizes Asynchronous and Synchronous read and write operations, making it ideal for use in consumer, digital consumer and industrial appliances.

Application Field

The S29JL032J60TFI313 is a multi-bit Flash device ideally suited for code storage in consumer, digital consumer and industrial applications where price, density, and reliability are key factors. . Additionally, the device offers excellent electrical and shock/vibration performance. Applications include USB flash drives, consumer electronics, PDAs and home appliances.

Working Principle

The S29JL032J60TFI313 works on the principle of changing the threshold voltage of the memory cells which corresponds to binary information. The memory cell is encapsulated by a gate and a layer of conductive material and is controlled by an electrode (control gate). The threshold voltage can then be modified to represent binary data. Through the use of a complex array of circuits, the memory cell can sense this threshold voltage and thus, determine whether the bit stored there is a 0 or a 1.

To write data, the control gate will be charged and selectively discharged, which in turn modifies the threshold voltage of the memory cells. The process of reading data is slightly more complicated as the memory cell must be carefully monitored. A comparator is used to monitor the voltage and determine whether the data stored is a 0 or a 1; this value is then passed onto the output.

The S29JL032J60TFI313 is capable of performing a variety of operations depending on the control inputs and the memory cell. This includes several read operations for different types of programming and erasing. Additionally, the S29JL032J60TFI313 also features built-in security features as well as protection against data corruption.

The specific data is subject to PDF, and the above content is for reference

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