S29JL032J70TFI423 Allicdata Electronics
Allicdata Part #:

S29JL032J70TFI423-ND

Manufacturer Part#:

S29JL032J70TFI423

Price: $ 1.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29JL032J70TFI423 datasheetS29JL032J70TFI423 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.75369
Stock 1000Can Ship Immediately
$ 1.93
Specifications
Series: JL-J
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

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Memory technology has become an indispensable field in modern semiconductor applications. Since the development of S29JL032J70TFI423 memory devices, the technology has received great attention from the scientific and industrial communities. This article aims to discuss the application field and working principle of S29JL032J70TFI423 memory.

S29JL032J70TFI423 memory is a type of flash memory that uses floating gate NAND cells for storing data. It is used in industrial applications because of its fast speed, large storage capacity and industry-grade reliability. Flash memory is used in a wide variety of applications, including automotive, consumer electronics, biomedical and military applications.

The working principle of S29JL032J70TFI423 memory is based on the basic operation of a floating-gate NAND cell. The NAND cell is composed of two electrodes, the drain and the source, which are connected by a channel. When a voltage is applied to the drain and source, it creates an electric field across the channel. The current passing through the channel can be controlled by the floating gate, which is metal oxide. The metal oxide in the floating gate acts as a capacitor, trapping the electric field and storing data.

S29JL032J70TFI423 memory devices have some unique features that make them ideal for industrial applications. They feature advanced error-correction and wear-leveling technologies that ensure that data is stored reliably without errors. They also have adaptive programming, which allows the device to adjust its programming and erase current for more efficient data storage. Additionally, S29JL032J70TFI423 memory devices have a wide operating temperature range of -55°C to 125°C and an endurance of up to 100,000 write/erase cycles.

In addition to the industrial applications, S29JL032J70TFI423 memory devices are also widely used in consumer electronics. The devices can be found in digital cameras, audio players, portable media players and other consumer devices. They are also used in embedded systems such as household appliances, security systems and medical diagnostic equipment.

S29JL032J70TFI423 memory devices offer a wide range of benefits and features over other types of memory. They are highly reliable, energy efficient and offer fast access times. Additionally, their high-density NAND cells make them particularly suitable for large-scale storage applications.

In conclusion, S29JL032J70TFI423 memory devices have a wide range of applications, from industrial to consumer electronics. Their fast speed, large storage capacity, and industry-grade reliability make them ideal for use in a variety of applications. The working principle of S29JL032J70TFI423 memory is based on the basic operation of a floating-gate NAND cell, which enables them to store data reliably without errors. Additionally, S29JL032J70TFI423 memory devices is also energy efficient and offer fast access times, making them a popular choice for embedded and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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