S29PL032J55BFI122 Allicdata Electronics
Allicdata Part #:

S29PL032J55BFI122-ND

Manufacturer Part#:

S29PL032J55BFI122

Price: $ 2.61
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48FBGA
More Detail: FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 55n...
DataSheet: S29PL032J55BFI122 datasheetS29PL032J55BFI122 Datasheet/PDF
Quantity: 1000
800 +: $ 2.36729
Stock 1000Can Ship Immediately
$ 2.61
Specifications
Series: PL-J
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory

S29PL032J55BFI122 is a high-reliability single-power NOR Flash memory designed for a wide range of applications that scale from small to large code storage. Its small size (only 1.27 mm x 0.85 mm) and low power operation make it ideal for a wide range of applications that require small form factor and low power requirements. It also has many advanced features such as temperature independent programming, sector protection, and wear leveling.

Application field

S29PL032J55BFI122 is targeted at multiple markets and new technologies such as the industrial, commercial, automotive, and aeronautics. It is suitable for embedded systems with limited space, such as an embedded controller, wireless devices, and digital signal processors. It is also suitable for applications that require small form factor, low power operation, and advanced feature set such as temperature independent programming, sector protection, and wear-leveling.

Working principle

S29PL032J55BFI122 uses a standard architecture of NOR Flash memory. The memory is divided into one or more sectors, and these sectors are further divided into blocks. Each block is made up of several pages. Each page contains 256 bytes of data. To read or write data to the Flash memory, the user must first program the address of the page they want to access. Then they can read or write the data. On writing, the data is written to an unused page in the Flash memory and the address is programmed accordingly. On erasing, the entire page or sector is erased, including all of its associated pages.

S29PL032J55BFI122 also supports advanced error correction codes (ECCs) which allow for detection and correction of errors that occur on a page during programming or erasing operations. In addition, the memory uses an advanced memory management scheme that offers wear-leveling and sector protection.

The specific data is subject to PDF, and the above content is for reference

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