Allicdata Part #: | S29PL032J60BFI123-ND |
Manufacturer Part#: |
S29PL032J60BFI123 |
Price: | $ 2.54 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 32M PARALLEL 48FBGA |
More Detail: | FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 60n... |
DataSheet: | S29PL032J60BFI123 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 2.30382 |
Specifications
Series: | PL-J |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (2M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 60ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-FBGA (8.15x6.15) |
Description
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The S29PL032J60BFI123 is classified as a nonvolatile memory, more specifically as a serial Flash memory, particularly in the application field of communication and consumer electronics. The device is available in a variety of packaging types and sizes that are suitable for a range of applications, including but not limited to Bluetooth speakers, smart watches, laptops and tablets.The S29PL032J60BFI123 features a wide operating voltage of 2.0V to 3.6V and achieves random read performance up to 60Mbps (minimum). The device also has a 2KB page buffer that supports single write operations as well as multiple I/O operations. Furthermore, the S29PL032J60BFI123 also boasts a robust hardware security system that provides double bit error rate (BER) censorship to ensure accurate data extraction.The working principle of the S29PL032J60BFI123 revolves around a single memory die composed of an array of memory cells. Each cell consists of an NMOS transistor that helps control the potential difference between two areas called the source and drain. Data is stored in the floating gate within each cell and is manipulated based on the voltage applied to the gate.The S29PL032J60BFI123 consists of a 8-bit wide, 256-byte deep array of word lines and bit lines. The device is built around a simple state machine and operates by writing and reading data respectively on two cycles, Write and Read. In Write Mode, the data is stored in the memory cells through the bit lines controlled by the word lines. In Read Mode, the data is retrieved from the memory cells through the bit lines and stored in an on-chip latch.The S29PL032J60BFI123 offers multiple features designed to maintain consistent performance, including the Temperature Compensated Self Refresh (TCSRF) that can adjust the refresh frequency based on the temperature of the device. The device features Endurance of up 100K Write Cycles at 3.0V and 1M Read Cycles at 3.0V. Furthermore, the S29PL032J60BFI123 also offers security features such as Password Protection and Boot Lock.In conclusion, the S29PL032J60BFI123 is a fast and reliable Serial Flash memory device that is suitable for a variety of consumer electronics applications. Its robust hardware security system, multiple features and wide operating voltage make it an ideal choice for a range of devices.The specific data is subject to PDF, and the above content is for reference
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