S29PL127J70BFI000E

The S29PL127J70BFI000E is a CMOS, 4-Mbit (512-Kword × 8-bit) Flash memory device. It is a 5-volt only device with a maximum supply voltage of 6.0 volts. The device is primarily designed for high-performance applications requiring maximum density in an extremely small package size. It is suitable for a wide variety of applications.

The S29PL127J70BFI000E has all the features of a standard Flash memory such as security functions, programmable block lock bits, Endurance & Data Retention with advanced features such as Buffer Programming, Fast Program/Erase and dual voltage compatibility. Its memory array is organized as 512K words x 8 bits. The device includes a hidden sector feature, which provides a dedicated Special Sector within the memory array. The hidden sector is not visible to the user and is used for customized boot requirements.

The block protection features allow users to protect individual blocks or a range of blocks from being modified or erased. The sector protect feature allows users to protect select blocks, sectors or the entire array from modifications or erasure. Each sector can also be individually locked or protected from being unmarked or erased.

The S29PL127J70BFI000E supports a wide range of program and erase speeds. Program/erase times are specific to individual blocks or sectors. Program and erase times for the entire array are independent of the number of blocks that are programmed or erased.

The device also supports buffer programming where a single command can program up to 32 bytes of data. This feature allows the user to perform multiple byte programming with a single command, reducing programming time substantially. The S29PL127J70BFI000E supports a wide range of voltage from 4.5 to 5.5 volts. This provides flexibility to the user to program the device at different supply voltage.

The S29PL127J70BFI000E device is manufactured using CMOS process technology. The Flash memory consists of non-volatile memory cells with a floating gate surrounded by memory array blocks. Data is written to the memory cells by using Fowler-Nordheim tunneling. The memory cells can be programmed and erased electrically.

The S29PL127J70BFI000E Flash memory device is suitable for many applications including communication products, industrial control, automotive, instrumentation, medical and security applications. It has features like fast program/erase, Program and Erase Suspend, several space savings features and fast access time. The device makes it ideal for use in high-performance applications requiring maximum density.