S29PL127J80TFI140 Allicdata Electronics
Allicdata Part #:

S29PL127J80TFI140-ND

Manufacturer Part#:

S29PL127J80TFI140

Price: $ 6.97
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 80...
DataSheet: S29PL127J80TFI140 datasheetS29PL127J80TFI140 Datasheet/PDF
Quantity: 1000
91 +: $ 6.32986
Stock 1000Can Ship Immediately
$ 6.97
Specifications
Series: PL-J
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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S29PL127J80TFI140 is a high-speed and high-capacity memory device. It is widely used in various industrial and consumer applications. It provides a reliable, high-speed and low-power-consumption solution for embedded applications. The device adopts the split-level architecture which can be divided into two parts: the logic part and the memory array. The logic part contains the main controller, flash controller and a number of hardwired buses and I/O ports to control the operations of the memory device. The memory array is composed of eight banks that are eight pieces of memory blocks, each main memory block contains several sub arrays of cells. The purpose of this article is to discuss the application field and working principle of S29PL127J 80TFI140 memory device.

Application Field

S29PL127J 80Tfi140 memory device is traditionally used in advanced portable machines and toys, gaming machines, personal digital assistance (PDAs), embedded controllers, robotics, communication devices, and industrial systems. It is also used, as an embedded memory, in computer systems and digital cameras. The memory device can provide high performance and low power consumption for various types of embedded devices.

The device can also be used in high-speed mobile phones and digital audio players, providing high-speed digital process with its superior performance. The memory device also operates well at low voltage, which allows it to be used in low-power applications. In addition, the device has a high data transfer rate and its low power consumption makes it ideal for battery-powered systems.

Working Principle

The S29PL127J 80TFI140 consists of Flash control logic, the main controller and Flash or EEPROM memory array. The Flash control logic controls the operation of Flash or EEPROM memory array and main controller. The main controller is responsible for controlling the flow of information through the Flash or EEPROM array. The Flash or EEPROM array is composed of eight banks that are eight pieces of memory blocks. Each main memory block contains several sub-arrays of memory cells.

When the memory device is powered on, the logic and the main controller first initialize the Flash or EEPROM memory array. The initialization process includes setting up the bus structure and address mapping, enabling the memory access and the power sequencing. After initialization, the main controller begins to receive instructions from the host processor. The instructions that the host processor send to the main controller instruct the controller to read from or write to specific memory addresses in the Flash or EEPROM memory array. The memory array can read or write data efficiently as few as bytes or as much as megabytes.

The main controller can also perform data compression or encryption. It stores the data in the buffer and then process the data before transmitting them to the memory array. After the data have been processed and stored, the main controller sends out interrupts to the host processor to indicate the task set has been completed. Finally, the main controller sends out acknowledgements to the host processor to indicate that the data have been stored to the Flash or EEPROM memory array.

The S29PL127J 80Tfi140 memory device is an ideal high-speed and low-power-consumption solution for embedded applications. Its split-level architecture and integrated controller can provide superior performance in various memory operations. It is used in many application fields, providing high-speed and low-power-consumption solutions for embedded applications.

The specific data is subject to PDF, and the above content is for reference

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