S29PL064J55BFI120

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The S29PL064J55BFI120 is a Memory component that has a wide range of application fields, such as automotive, industrial, and consumer electronics. This component is a 64-Mbit (8-Mbit x 8-bit) CMOS Static RAM with a dual power supply, allowing for fast access and low power consumption.

The component features a fast access time (120 ns), a high speed power-down/power-up, and a 25 ns page access time with three-state output control. It also offers an extended temperature range of -55°C to +125°C, making it suitable for use in a variety of applications.

The S29PL064J55BFI120 is composed of two banks of memory cells, each having 8 Mb x 8. Each cell can store a single byte (8 bits) of data and is connected to eight data IO lines DQ[7:0]. The cell also has a write enable (WE) line, a chip enable (CE) line, and an output enable (OE) line. The cell also contains the necessary control logic for the cell to read, write, or refresh data from or to the external data lines.

To read or write data from or to the cells, the data must first be loaded into or out of the eight data IO lines DQ[7:0]. This is done by issuing a Read or Write command to the cell. The Read or Write command is then sent through the CE and WE lines, and the data is then loaded into or out of the cell. When the Read or Write command is complete, the OE line will enable the data to be read from or written to the external data IO lines.

Once the data has been loaded into or out of the cells, the Refresh command can be used to refresh the data. This is done by issuing a Refresh command to the cell, which will then scan all the cells in the bank and then refresh the data. This is necessary in order to ensure that the data in the cells remain accurate and up-to-date.

The S29PL064J55BFI120 is a versatile memory component with a wide range of applications. It can be used in automotive, industrial, and consumer electronics, as well as in a variety of other applications. With its fast access time and low power consumption, the component makes it ideal for use in any application requiring a reliable, high-performance memory device.

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