S29PL032J55BFI120E Allicdata Electronics
Allicdata Part #:

S29PL032J55BFI120E-ND

Manufacturer Part#:

S29PL032J55BFI120E

Price: $ 0.00
Product Category:

Uncategorized

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH NOR 48FBGA
More Detail: N/A
DataSheet: S29PL032J55BFI120E datasheetS29PL032J55BFI120E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S29PL032J55BFI120E is a type of non-volatile memory device from the company STMicroelectronic. It is specially designed for industrial applications including automotive, consumer, and industrial uses. This device is a 32Mbit NOR Flash memory, with a 5V operation and a double word (32-bit) data bus that supports asynchronous burst read access. This robust and reliable architecture allows for reading large blocks of memory at high speeds with flexibility and efficiency.

The memory device has a maximum speed rating of 70 MHz and an average access time of 55-ns. Additionally, the device offers error correction code (ECC) support for error detection and correction and advanced sector protection capabilities. This allows end-users to protect and secure their data securely.

The S29PL032J55BFI120E offers a wide range of unique advantages over other types of non-volatile memory devices. Most notably, it is designed to be used in extreme conditions with its advanced thermal protection feature. This allows the device to be used in hot, cold, and humid environments. Additionally, its advanced flash management capabilities provide a fast, reliable, and cost-effective way to deploy and upgrade applications over the lifetime of the product.

The working principle of the S29PL032J55BFI120E is based on the traditional NOR Flash architecture. It uses the charge-pump circuitry to transfer data between the two memory cells. Each memory cell is made of two transistors or an advanced “floating gate” technology which stores the data. Flash memory cells are read by one of two methods. In the first method, the charge pump transfers the charge on the floating gate of the memory cells into a sense amplifier, which in turn can compare the voltage level of two cells and determine the data they hold. In the second method, the charge pump transfers the charge directly to a voltage converter, which generates a voltage level corresponding to the data stored in the cell.

The S29PL032J55BFI120E is ideal for applications requiring higher-speed, higher-capacity, and higher-reliability non-volatile memory. This includes applications such as satellite navigation, imaging, audio, and video systems, and automotive applications. The device can also be used in industrial and communication projects where extreme temperatures are encountered. Finally, its modular design offers a cost-effective way for embedded applications to quickly deploy and upgrade applications using a single memory device.

The specific data is subject to PDF, and the above content is for reference

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