S29PL127J60BAW000 Allicdata Electronics
Allicdata Part #:

S29PL127J60BAW000-ND

Manufacturer Part#:

S29PL127J60BAW000

Price: $ 6.14
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 60...
DataSheet: S29PL127J60BAW000 datasheetS29PL127J60BAW000 Datasheet/PDF
Quantity: 1000
210 +: $ 5.57256
Stock 1000Can Ship Immediately
$ 6.14
Specifications
Series: PL-J
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Description

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S29PL127J60BAW000 is a High-Density Stack 16-megabit Firmware Hub (FWH) Flash memory manufactured by Spansion. It is the first 16 megabit part introduced by Spansion, and is one of the highest-density commercial Flash memories available. This advanced flash memory is widely used in a variety of applications due to its superior memory capacity. Its general purpose as a memory device is to store and retrieve data that is used by a device or a computer system.

Application Field of S29PL127J60BAW000:

The S29PL127J60BAW000 flash memory provides a variety of application fields for use, including:

  • System BIOS programs, Bios utility and code shadowing
  • Home PCs and Notebooks
  • Networking, peripherals, and video applications
  • Industrial automation and telecommunications equipment
  • Storage device applications including CompactFlash, SmartMedia and Secure Digital (SD) cards
  • Embedded systems such as set-top boxes, industrial controllers, and DVD players

Working Principle of S29PL127J60BAW000:

The S29PL127J60BAW000 flash memory works using the same principles as Internal SRAM or DRAM. However, the S29PL127J60BAW000 is inherently different from both in that it has no moving parts or capacitors, and employs EEPROM (Electrically Erasable and Programmable Read-Only Memory) technology. In order to store data in flash memory, electrons must be precisely inserted into the local dielectric layers on the chip. This is accomplished by applying an appropriate voltage across a capacitor. This process is known as programming and the data is stored in the form of a charge.

Retrieving data in the S29PL127J60BAW000 is done by measuring the charge stored on the dielectric layer. The voltage levels are compared to a reference voltage, and the data is then gathered in binary form. By applying the appropriate voltages and utilizing the DRAM or SRAM programming principles, the S29PL127J60BAW000 is able to store and retrieve data in a highly efficient manner.

The S29PL127J60BAW000 flash memory is a reliable device that complies with JEDEC Standard No. 4 specifications. It offers numerous features such as block locking, sector locking, and programming of alternate parts. Additionally, an integrated failsafe protection circuitry protects data from power loss during code execution, and the integrated ESD protection circuits prevent the flash chip from damage due to Electro Static Discharge (ESD).

Conclusion:

The S29PL127J60BAW000 flash memory is a reliable, high-density memory device that is suitable for a wide range of applications. It works by employing EEPROM (Electrically Erasable and Programmable Read-Only Memory) technology, and is able to store and retrieve data in a highly efficient manner. It is compliant with JEDEC Standard No. 4 specifications and offers built-in protection circuitry to protect data from power loss and ESD. The S29PL127J60BAW000 is an ideal memory device for a wide range of devices and applications that require large amounts of storage space.

The specific data is subject to PDF, and the above content is for reference

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